Results 171 to 180 of about 3,381 (218)

Electronic interface states at the Pt/Co interface

Journal of Magnetism and Magnetic Materials, 1993
Abstract The electronic structure of Pt overlayers on Co(0001) was investigated by spin-resolved and spin-integrated photoemission spectroscopy. The Pt/Co interface exhibits electronic interface states of mainly Pt-5d character. One of these interface states shows a peak separation of its spin components of about 170 meV indicating magnetic ...
W. Weber, D.A. Wesner, D. Hartmann, U.A. Effner, G. Güntherodt   +4 more
openaire   +1 more source

Relativistic state equations for the interface

Journal of Colloid and Interface Science, 2005
Relativistic state equations were obtained for various interfaces and cases. The relativistic state equation was done for perfect gases as well.
openaire   +2 more sources

Interface states of AlSb/InAs heterointerface with AlAs-like interface

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, 2006
We have studied the interface states (IFSs) of AlSb/InAs multiple quantum wells (MQWs) with an AlAs-like interface. The MQWs were grown by molecular beam epitaxy (MBE) using a proper shutter sequence at their interface to control the AlAs-like interface.
Shin-ichiro Gozu, Kouichi Akahane, Naokatsu Yamamoto, Akio Ueta, Taro Ando, Naoki Ohtani   +5 more
openaire   +1 more source

Aggregation States of Polystyrene at Nonsolvent Interfaces

Langmuir, 2014
The aggregation states of polystyrene (PS) thin films at interfaces with nonsolvents such as water, methanol, and hexane were examined by specular neutron reflectivity and sum-frequency generation vibrational spectroscopy. The density profiles of the PS thin films along the direction normal to the interface with water and methanol were comparable to ...
Ayanobu, Horinouchi, Norifumi L, Yamada, Keiji, Tanaka   +2 more
openaire   +2 more sources

The state of tangible interfaces

CHI '06 Extended Abstracts on Human Factors in Computing Systems, 2006
In recent years, the CHI community has seen growth in projects that involve tangible user interfaces and tangible interaction. But, many researchers feel that this emerging field lacks in justifying research, industry adoption, and conceptual frameworks.
Oren Zuckerman, Brygg Ullmer, Lars Erik Holmquist, Hiroshi Ishii 0001, George W. Fitzmaurice, Yvonne Rogers, Wendy E. Mackay, Tom Rodden   +7 more
openaire   +1 more source

Electronic States at the Water/Air Interface

The Journal of Physical Chemistry B, 2004
Using combined path integral-molecular dynamics simulation techniques, we analyze electronic solvation at the water/air interface. Superficial electrons present a considerable extent of spatial confinement, somewhat less marked but still comparable to that found in bulk.
Javier, Rodriguez, Daniel, Laria
openaire   +2 more sources

Surface State Scattering at a Buried Interface

Physical Review Letters, 2005
The free-electron-like surface state of Mg(0001) is strongly modified in thin films grown on W(110). The long bulk penetration length of its wave function makes it sensitive to the reflective properties of the buried interface, and hence to the complex electronic structure of the substrate.
F, Schiller, R, Keyling, E V, Chulkov, J E, Ortega   +3 more
openaire   +2 more sources

Tuning Interface States

Science, 2006
When grown with atomic precision, materials that are normally insulators can form a conducting interface with properties that can be controlled by an external field.
openaire   +1 more source

Electronic states at silicide-silicon interfaces

Physical Review Letters, 1986
A capacitance-spectroscopy technique based on accurate phase detection has been developed to measure the unoccupied states at silicide-silicon contacts. For Pd and Ni silicides, a dispersed group of states was found to exist in the Si band gap with its peak at a level 0.63--0.65 eV above the valence-band edge.
Ho, PS, Yang, ES, Evans, HL, Wu, X
openaire   +4 more sources

Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface

Technical Physics Letters, 2020
The C–V characteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal–insulator–semiconductor structures have been studied. It has been established that the fragmentary measurement of the C–V characteristics of InAlAs-based metal–insulator–semiconductor structures, in contrast standard registration method to at a constant voltage sweep ...
A. P. Kovchavtsev, M. S. Aksenov, A. E. Nastov’yak, N. A. Valisheva, D. V. Gorshkov, G. Yu. Sidorov, D. V. Dmitriev   +6 more
openaire   +1 more source