Results 181 to 190 of about 3,381 (218)
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Interface states at the anodized Al2O3-metal interface
Journal of Applied Physics, 2001The capacitance of Al–Al2O3-metal capacitors with Al2O3 of different thicknesses, formed by anodizing evaporated Al films in ethylene glycol-based or H2O-based electrolytes to different voltages, has been measured between 10 kHz and 1 MHz for ten metal electrodes.
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Theory of superconducting-quasiparticle interface states
Physical Review B, 1989We calculate the thermodynamic Green's functions for a BCS superconductor with a wall of magnetic material cleaving it into two semi-infinite regions. This is a model of an interface between a superconductor and a perfectly insulating ferromagnet. We show that the scattering of superconducting quasiparticles from a spin-polarized wall leads to resonant
, DeWeert, , Arnold
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The minimization and decomposition of interface state machines
Proceedings of the 31st annual conference on Design automation conference - DAC '94, 1994There is a well-recognized need for accurate timing-verification tools that account for the functional behavior of component interfaces, and thereby do not traverse false sequential and combinational paths. Such tools, however, are susceptible to an exponential increase in task complexity as circuit-size and functional-complexity of component ...
Ajay J. Daga, William P. Birmingham
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The interface state assisted charge transport at the MoO3/metal interface
The Journal of Chemical Physics, 2009The interface formation between a metal and MoO3 was examined. We carried out in situ ultraviolet and x-ray photoemission spectroscopy with step-by-step deposition of MoO3 on clean Au and Al substrates. The MoO3 induces huge interface dipoles, which significantly increase the work functions of Au and Al surfaces.
Yeonjin, Yi +6 more
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Boundary conditions and interface states in heterostructures
Physical Review B, 1988The interface between two one-dimensional crystals is studied with the use of the transfer matrix. This microscopic approach allows a study of the accuracy of the effective-mass approximation (EMA) and derivation of the boundary conditions (BC) for the envelope functions. These BC turn out to be very different from those adopted so far: they contain an
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State inference for dynamically changing interfaces
Computer Languages, 2001Summary: Types in current programming languages specify constant sets of messages always acceptable throughout the lifetime of the types' instances. However, especially in concurrent object-oriented systems, the acceptability of messages often changes with the objects' states.
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SiO2/InP interfaces with reduced interface state density
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1984By employing a new InP surface preparation procedure based upon KOH/methanol, the interface state density of plasma-enhanced chemically vapor deposited SiO2/InP structures has been significantly reduced. Capacitance–voltage characteristics of these structures exhibit unusual nonequilibrium behavior which appears to be assoicated with the formation of a
J. F. Wager, M. D. Clark, R. A. Jullens
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Interface states model for III–V oxide interfaces
Microelectronic Engineering, 2009A general model of the density of interface states at III-V oxide interfaces is presented. The interface states arise from the native defects, such as Ga or As dangling bonds and Ga-Ga or As-As like-atom bonds created by oxidation. As-As bonds are a likely cause of states at the conduction band edge of GaAs.
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