Results 241 to 250 of about 1,646,245 (299)

Structural basis for domain coupling in heteromeric glycine receptors revealed by an atypical allosteric agonist. [PDF]

Sci Adv
Gibbs E, Feddersen B, Kindig KJ, Seiferth D, Biggin PC, Chakrapani S.   +5 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

Interface states in Si-SiO2 interfaces

Microelectronics Reliability, 1972
Abstract Interface state parameters were studied in MOS capacitors over a wide range of energy by conductance and capacitance measurements at various temperatures from room temperature to liquid nitrogen temperature. A new technique was developed for analysis of the data which allows to obtain the density of states, the capture cross section, the ...
H. Deuling, E. Klausmann, A. Goetzberger
openaire   +2 more sources

Coupled topological interface states

Physical Review B, 2021
Topological interface states in one-dimensional electronic and photonic systems are currently intensively investigated. We demonstrate the coupling of topologically confined states: By concatenation of three substructures, where the outer embedding structures have opposite signs of reflection phases to the embedded structure, we realize a system of ...
Christoph Schmidt, Alexander Palatnik, Markas Sudzius, Stefan Meister, Karl Leo   +4 more
openaire   +1 more source

Superconducting-Quasiparticle Interface States

Physical Review Letters, 1985
We describe superconducting-quasiparticle interface states which are produced by a certain class of local potentials at interfaces involving superconductors. These states penetrate at least a coherence distance into the superconductor and arise even when the pair potential is uniform throughout the superconductor.
, DeWeert, , Arnold
openaire   +2 more sources

Interface states of ZnSe/GaAs interface

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
The in-plane anisotropy (εx≠εy) and the off-plane anisotropy (εx≠εz) of ZnSe/GaAs interfaces formed under conditions that promote the formation of either Zn–As or Ga–Se bonds are studied by reflectance difference spectroscopy. Two resonance lines, one at 2.70 eV and the other around 3.0 eV, have been observed. The in-plane anisotropy is along the [110]
Yang, Zhi Yu, Sou, Iam Keong, Yeung, YH, Wong, George K L, Wang, Jie, Jin, Caixia, Hou, Xiaoyuan   +6 more
openaire   +2 more sources

Silicide-Silicon Interface States

MRS Proceedings, 1985
ABSTRACTThe existence and nature of localized states at metal-semiconductor interfaces are long-standing scientific issues that have not been resolved. As device dimensions continue to shrink and packing density continues to increase, interfaces at silicide-silicon contacts will be increasingly influential in determining the circuit behavior ...
E. S. Yang, X. Wu, H. L. Evans, P. S. Ho
openaire   +5 more sources

Interface States in SiInxPyOz–InSb Interfaces

Physica Status Solidi (a), 1991
MIS structures are fabricated on n-type InSb. As gate insulators, SiInxPyOz layers are formed by new low-temperature processes. The MIS capacitance is measured at 1 MHz and 100 K. The interface state density in the energy range from Ec to midgap is about (1.1 to 3.0) × 1012 cm−2 eV−1.
K. Hattori, Y. Torii
openaire   +1 more source

Interface states at the Ga–GaAs interface

Journal of Vacuum Science and Technology, 1978
A variable-excitation energy photoemission study has been made of the occupied states near the Ga–GaAs (110) interface as the interface is formed. Using a combination of valence and core-level spectroscopy, new aspects of the interface electronic structure have been deduced.
R. Z. Bachrach, A. Bianconi
openaire   +1 more source