Results 251 to 260 of about 1,646,245 (299)

Interface-dependent tunable elastic interface states in soft metamaterials

Journal of Applied Physics, 2021
Elastic interface states, which are usually generated at the interface of two connected domains with opposite topological invariant, have been successfully demonstrated in periodic structures. Therefore, the interface states determined by the position of interface between two domain walls in one-dimensional elastic systems are rarely reported, which ...
Hao Niu, Shuaifeng Li, Jianfeng Zang
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Interface states at the SiO2-Si interface

Surface Science Letters, 1983
Abstract The present understanding of interface states at the SiO2-Si interface is reviewed. Typical results of measurement techniques are presented and critically discussed with respect to identification of types and origins of interface states. Only one type of interface state is observed after strong hydrogen annealing.
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Solid-state and biological systems interface

2012 Proceedings of the ESSCIRC (ESSCIRC), 2012
Solid-state electronic devices can be engineered to detect and manipulate biological molecules and cells by using electric or magnetic interactions. The integrated circuits, which can contain a large number of such devices, may then potentially be developed into low-cost chip-scale platforms to perform bioanalytical tasks in a multiplexed manner for ...
Nan Sun, Yong Liu, Ling Qin, Guangyu Xu, Donhee Ham   +4 more
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Tuning Interface States

Science, 2006
When grown with atomic precision, materials that are normally insulators can form a conducting interface with properties that can be controlled by an external field.
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Theory of superconducting-quasiparticle interface states

Physical Review B, 1989
We calculate the thermodynamic Green's functions for a BCS superconductor with a wall of magnetic material cleaving it into two semi-infinite regions. This is a model of an interface between a superconductor and a perfectly insulating ferromagnet. We show that the scattering of superconducting quasiparticles from a spin-polarized wall leads to resonant
, DeWeert, , Arnold
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SiO2/InP interfaces with reduced interface state density

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1984
By employing a new InP surface preparation procedure based upon KOH/methanol, the interface state density of plasma-enhanced chemically vapor deposited SiO2/InP structures has been significantly reduced. Capacitance–voltage characteristics of these structures exhibit unusual nonequilibrium behavior which appears to be assoicated with the formation of a
J. F. Wager, M. D. Clark, R. A. Jullens
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Electronic interface states at the Pt/Co interface

Journal of Magnetism and Magnetic Materials, 1993
Abstract The electronic structure of Pt overlayers on Co(0001) was investigated by spin-resolved and spin-integrated photoemission spectroscopy. The Pt/Co interface exhibits electronic interface states of mainly Pt-5d character. One of these interface states shows a peak separation of its spin components of about 170 meV indicating magnetic ...
W. Weber, D.A. Wesner, D. Hartmann, U.A. Effner, G. Güntherodt   +4 more
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Interface states of AlSb/InAs heterointerface with AlAs-like interface

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials, 2005
We have studied the interface states (IFSs) of AlSb/InAs multiple quantum wells (MQWs) with an AlAs-like interface. The MQWs were grown by molecular beam epitaxy (MBE) using a proper shutter sequence at their interface to control the AlAs-like interface.
Shin-ichiro Gozu, Kouichi Akahane, Naokatsu Yamamoto, Akio Ueta, Taro Ando, Naoki Ohtani   +5 more
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Relativistic state equations for the interface

Journal of Colloid and Interface Science, 2005
Relativistic state equations were obtained for various interfaces and cases. The relativistic state equation was done for perfect gases as well.
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Interface dipole at metal-organic interfaces: Contribution of metal induced interface states

Applied Physics Letters, 2009
Despite the importance of interface dipole on the charge carrier injection at metal/organic contacts, there is yet no estimation of the various contributions to the overall dipole. We propose a simple approach to delineate and estimate the contribution of metal-induced interface states (MISs) toward the overall dipole.
C. S. Lee, J. X. Tang, Y. C. Zhou, S. T. Lee   +3 more
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