Results 221 to 230 of about 32,865 (266)

Ion-assisted deposition and metastable structures

Thin Solid Films, 1988
Abstract Ion-assisted deposition (IAD) has become an established method for the synthesis of thin films and the modification of their structure, composition, hardness and electrical and optical properties. A variety of techniques are used to achieve the desired ion bombardment during film growth and to produce ionized species from which the film is ...
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Microstructure of epitaxial layers deposited on silicon by ion assisted deposition

Solar Energy Materials and Solar Cells, 2001
Abstract We demonstrate the epitaxial growth of silicon with ion assisted deposition on pyramidally structured porous silicon and investigate the microstructure of the epitaxial layer with transmission electron microscopy. The major defects in the grown pyramid structure are stacking faults on the {1 1 1} facets of the pyramids, whereas the epitaxial
J Krinke, G Kuchler, R Brendel, H Artmann, W Frey, S Oelting, M Schulz, H.P Strunk   +7 more
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Low Energy Ion Assisted Vapor Deposition

MRS Proceedings, 1999
AbstractThe performance of multilayered thin film materials often depends sensitively upon the (physical) roughness and degree of (chemical) mixing at interfaces. Irradiation of a growth surface with an assisting ion beam is often used to modify surface roughness.
X. W. Zhou, H. N. G. Wadley
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Ion assisted deposition of oxynitrides of aluminum and silicon

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
Optical thin films of nitrides, oxynitrides, and oxides of aluminum and silicon were deposited using ion assisted deposition. Coatings were deposited by evaporation of either AlN or Si with simultaneous bombardment with 300-eV ions of nitrogen, oxygen, or a mixture of oxygen and nitrogen.
G. A. Al-Jumaily, T. A. Mooney, W. A. Spurgeon, H. M. Dauplaise   +3 more
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Ion-assisted deposition of silver thin films

Thin Solid Films, 2000
Silver thin films deposited with ion bombardment are more durable in a humid environment, and maintain a higher value of reflectance over time, than films deposited without ion bombardment, particularly in the short wavelength range. Experimental results indicate that the surface roughness is reduced and the film becomes denser.
Cheng-Chung Lee, Ta-Yuan Lee, Yi-Jun Jen
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Oxide film deposition by Gas-Cluster ion assisted deposition

AIP Conference Proceedings, 1999
The development of ultra-high quality (UHQ) films is in progress under the NEDO projects. This project is a collaboration between several companies, national laboratories and universities. A Multi-Beam Gas-Cluster Ion Beam System has been developed for fabricating indium tin oxide (ITO) films.
K. Murai, S. Tamura, M. Kiuchi, N. Umesaki, E. Minami, J. Matsuo, I. Yamada   +6 more
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Deposition of thin films by ion-assisted processes

SPIE Proceedings, 1994
ABSTRACTThe properties of thin films may be enhanced greatly when the depositing atoms are subjected to low energy ion bombardment. The arc evaporation process offers the possiblity ofintrinsic selfbombardment due to the high percentage of low energy ionized material present in the evaporant.
Philip J. Martin, Xi Wang, A. Bendavid, T. J. Kinder   +3 more
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Computer simulation of ion-assisted thin film deposition

Radiation Effects and Defects in Solids, 1997
Abstract Ion assistance has been very successful in modern processes of physical or chemical vapour deposition, as it promotes the production of high-quality films and, in particular, the formation of new thin film materials with extreme properties [1–5]. In contrast to a broad range of experimental experience, the basic understanding of the effects of
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Ion-assisted deposition of bulklike ZrO2 films

Applied Physics Letters, 1983
Stable thin films of zirconium dioxide are produced by ion-assisted electron beam deposition at room temperature and 300 °C. The method yields films with substantially increased packing density resulting in refractive indices close to the bulk value. The improvement in optical properties is accompanied by an amorphous to cubic crystalline transition of
P. J. Martin, R. P. Netterfield, W. G. Sainty, G. J. Clark, W. A. Lanford, S. H. Sie   +5 more
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Properties of ion assisted deposited titania films

Journal of Applied Physics, 1993
Thin films of titanium dioxide have been deposited using ion assisted deposition with oxygen ions in the energy range 100–500 eV and current densities up to 100 μA/cm2. It has been observed that the refractive index of the films increases up to 300 eV and the extinction coefficient increased only nominally up to 300 eV.
Krishna, Ghanashyam M, Rao, Narasimha K, Mohan, S   +2 more
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