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Ion beam assisted deposition with a duoplasmatrona)

Review of Scientific Instruments, 1992
One of the recent applications of ion sources is their use for ion beam assisted deposition of thin films and coatings. This method combines a coating technique such as evaporation or sputtering with bombardment with ions in the keV energy range. The required ions with defined energy, flux, and impact angle are delivered from an ion source.
W. Ensinger   +6 more
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Ion beam assisted etching and deposition

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1990
I n situ vacuum processing technology is becoming increasingly important with the increasing scale of integration and continuing shrinkage of device dimensions. Ion beams induce various chemical effects which are very promising for applications such as in situ processing technology, with the promise of improved high processing rates and low process ...
Kenji Gamo, Susumu Namba
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Ion Beam Assisted Deposition

MRS Proceedings, 2003
ABSTRACTThe beneficial roles energetic ions play in thin film vacuum processes have long been recognized by the vacuum coating community. Optical coaters were among the first to adopt the process in the form of concurrent, low energy, directed ion beam bombardment of physical vapor deposition [electron beam] coatings for producing dense, adherent ...
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Equipment for ion beam assisted deposition

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
Abstract Ion beam assisted deposition (IBAD) is a powerful new technique for producing adherent surface coatings with special properties. A facility for this technique is described. It consists of a cylindrical vacuum chamber, a rotating cooled target holder, an electron gun with evaporation source, a duoplasmatron ion source for gaseous ions, and ...
G.K. Wolf   +3 more
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Ion-Beam-Assisted Deposition and Synthesis

MRS Bulletin, 1987
Concurrent energetic particle bombardment during film deposition can strongly modify the structural and chemical properties of the resulting thin film. The interest in this technique, ion-assisted deposition, comes about because it can be used to produce thin films with properties not achievable by conventional deposition.
S.M. Rossnagel, J.J. Cuomo
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Ion beam assisted thin film deposition

Materials Science Reports, 1991
The bombardment of a growing film with energetic particles has been observed to produce beneficial modifications in a number of characteristics and properties critical to the performance of thin films and coatings such as: improved adhesion; densification of films grown at low substrate temperatures; modification of residual stresses; control of ...
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Ion source with plasma cathode for ion assisted deposition

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
Abstract An ion source with a plasma cathode has been developed to attain a long lifetime for oxygen ion production. In this ion source, a plasma of a nonreactive working gas serves as a cathode in place of a thermionic tungsten hot cathode used in the Kaufman ion source. This ion source consists of two compartments, i.e.
T. Shiono   +4 more
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Optical properties of ThF_4 films deposited using ion-assisted deposition

Applied Optics, 1987
Ion beam processes have been employed in different deposition techniques for the purpose of improving the optical and mechanical properties of thin films. One technique is ion-assisted deposition (IAD) which involves the bombardment of the growing film with low energy ions.
G A, Al-Jumaily   +3 more
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Temperature-stable bandpass filters deposited with plasma ion-assisted deposition

Applied Optics, 1996
Plasma ion-assisted deposition with an advanced plasma source was investigated to produce narrow-bandpass filters in the near-infrared spectral range for telecommunication applications. The multilayer coatings were qualified by the optical performance, the vacuum-to-air behavior, the temperature stability, and the film stress. TiO(2)/SiO(2) and Ta(2) O(
A, Zöller   +3 more
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Ion-assisted deposition of lanthanum fluoride thin films

Applied Optics, 1987
Ion-assisted deposition has been used to deposit lanthanum fluoride thin films with near-unity film packing densities and no significant increase in absorption. Rutherford backscattering analysis has determined the effect of ion bombardment on the film stoichiometries including the degree of fluorine deficiency.
J D, Targove   +5 more
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