Results 161 to 170 of about 2,330,072 (298)

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source

Location Specificity of Transcranial Electrical Stimulation on Neuronal Electrodynamics: A Mathematical Model of Ion Channel Gating Dynamics and Ionic Flux Due to Neurostimulation. [PDF]

Front Comput Neurosci, 2019
Lindberg KR, Dougherty ET.
europepmc   +1 more source

Gold‐Stabilized Copper Enables Anodic Hydrogen Evolution for Ultralow‐Voltage CO‐to‐Ethylene Electrolysis

Advanced Materials, EarlyView.
Gold‐stabilized copper suppresses hydroxide‐driven deactivation during anodic hydrogen evolution from furfural. Pairing this low‐potential anode with CO‐to‐ethylene electroreduction enables sub‐1 V operation at 400 mA cm−2, high single‐pass CO conversion, and co‐production of ethylene, furoic acid, and a separate hydrogen stream.
Sungjin Park, Hengzhou Liu, Heejong Shin, Hafiz Ghulam Abbas, Loann Bonnenfant, Ke Xie, Hyeon Seok Lee, Fatemeh Arabyarmohammadi, Jianan Erick Huang, Panos Papangelakis, Peiying Wang, Ali Shayesteh Zeraati, Jiheon Kim, Roham Dorakhan, David Sinton, Xiaopeng Liu, Wenzhen Li, Byoung‐hoon Lee, Edward H. Sargent   +18 more
wiley   +1 more source

Programmable Functional Silicification of DNA Origami Nanostructures

Advanced Materials, EarlyView.
This work introduces additional functionality into silica‐coated DNA origami nanostructures using non‐standard silica precursors. A fluorescent precursor enables enhanced intracellular tracking, while a disulfide‐containing reagent yields redox‐responsive, degradable silica coatings.
Anna V. Baptist, Lasse Guericke, Philipp Mauker, Oliver Thorn‐Seshold, Amelie Heuer‐Jungemann   +4 more
wiley   +1 more source

Sustainable and Multifunctional Natural Macromolecular Polymers for Aqueous Zn Metal Batteries

Advanced Materials, EarlyView.
We comprehensively review the structure‐function relationships and regulatory mechanism of natural macromolecular polymers in stabilizing zinc anodes at the microscopic and mesoscopic scales. The interactions among polymer structures, optimization strategies, and regulatory mechanisms are discussed systematically summarizing recent related research ...
Yunuo Shi, Bo Jiang, Jingcheng Zhang, Xiaodong Shao, Peixun Xiong, Lutong Shan, Shengyang Huang, Mengfang Liang, Mengyao Chang, Fangyan Liu, Wenwu Li, Baoyu Xia, Wei Ji, Ho Seok Park   +13 more
wiley   +1 more source

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

Advanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim, Seoeun Jang, Hakseung Rhee, Min Gu Lee, Daehee Kim, Taewook Go, Woon Hyung Cheong, Hanchan Song, Kyung Min Kim   +8 more
wiley   +1 more source

A deep learning approach to real-time Markov modeling of ion channel gating. [PDF]

Commun Chem
Oikonomou E, Juli Y, Kolan RR, Kern L, Gruber T, Alzheimer C, Krauss P, Maier A, Huth T.   +8 more
europepmc   +1 more source

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

Parameter inference for stochastic reaction models of ion channel gating from whole-cell voltage-clamp data. [PDF]

Philos Trans A Math Phys Eng Sci
Del Core L, Mirams GR.
europepmc   +1 more source