Results 31 to 40 of about 3,441,284 (367)
Resonant Raman Scattering in Boron-Implanted GaN
Micromachines, 2022 A small Boron ion (B-ion) dose of 5 × 1014 cm−2 was implanted in a GaN epilayer at an energy of 50 keV, and the sample was subjected to high-temperature rapid thermal annealing (RTA).
Yi Peng +7 more
doaj +1 more source
Compositon of Tantalum Nitride Thin Films Grown by Low-Energy Nitrogen Implantation: A Factor Analysis Study of the Ta 4f XPS Core Level [PDF]
, 2004 Tantalum nitride thin films have been grown by in situ nitrogen implantation of metallic tantalum at room temperature over the energy range of 0.5-5keV.
A. Arranz +26 more
core +1 more source
Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment
Science, 2022 Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials.
Seunghun Kang +27 more
semanticscholar +1 more source
Journal of Biomechanical Science and Engineering, 2018 Poly(lactic acid) (PLA) has attracted much attention as a material for bioabsorbable bone fixation devices, however degradation rate of PLA is very low.
Masato SAKAGUCHI +2 more
doaj +1 more source
High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment
AIP Advances, 2019 This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and ...
Zirui Liu +6 more
doaj +1 more source
Analysis of retained deuterium on Be-based films: Ion implantation vs. in-situ loading
Nuclear Materials and Energy, 2018 Pure Be, Be-O and Be-O-C thin coatings were deposited using high-power impulse magnetron sputtering (HiPIMS) with and without incorporation of deuterium.
R. Mateus +7 more
doaj +1 more source
Nanoscale nonlinear effects in Erbium-implanted Yttrium Orthosilicate
, 2015 Doping of substrates at desired locations is a key technology for spin-based quantum memory devices. Focused ion beam implantation is well-suited for this task due to its high spacial resolution.
Becker, Hans-Werner +13 more
core +1 more source
, 2017 Nitrogen-vacancy (NV) in diamond possesses unique properties for the realization of novel quantum devices. Among the possibilities in the solid state, a NV defect center in diamond stands out for its robustness—its quantum state can be initialized ...
A. Haque, S. Sumaiya
semanticscholar +1 more source
Scientific Reports, 2016 Rare-earth-free magnets are highly demanded by clean and renewable energy industries because of the supply constraints and environmental issues. A promising permanent magnet should possess high remanent magnetic flux density (Br), large coercivity (Hc ...
Yanfeng Jiang +5 more
semanticscholar +1 more source
Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation
Journal of Nanotechnology, 2013 We studied the photoluminescence (PL) of Si nanocrystals (Si-NCs) embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO2 achieving a robust and better protected system.
Jhovani Bornacelli +3 more
doaj +1 more source