Results 211 to 220 of about 252,126 (263)
Digital and scalable laser-based fabrication of reusable bismuth telluride thermoelectrics with superior performance and mechanical flexibility. [PDF]
Npj Flex ElectronFlorenciano I +4 more
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Investigations on junction temperature estimation based on junction voltage measurements
Microelectronics Reliability, 2010Reliability and ageing tests on power semiconductor devices require estimation of junction temperatures in order to control thermal stresses and monitor failure criteria. For this purpose, thermo-electrical parameters, such as voltage forward drop dependence with temperature are usually carried out in low injection level.
Khatir, Zoubir +2 more
openaire +1 more source
High temperature CoSb3–Cu junctions
Microelectronics Reliability, 2011Abstract The subject of this work is to develop contact joints between a CoSb3 thermoelectric material and a copper electrode. The CoSb3–Cu junctions were produced by the resistance brazing (RB) technique in the atmosphere of protective gases (90% Ar + 10% H2), with the application of Ag–Cu metal fillers.
Krzysztof Tomasz Wojciechowski +2 more
openaire +1 more source
Accurate measurement of the temperature of a junction
Review of Scientific Instruments, 1987Knowledge of the temperature of a junction is very useful for experimenters or technologists. We propose here an easy but accurate method to measure it for any type of junction, isolated or in a device. The method is based on a numerical analysis of a transient signal, provided by the change of capacitance of the space-charge region of the junction due
D. Stievenard, J. C. Bourgoin
openaire +1 more source
A method of active junction temperature control for IGBT
IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society, 2017The junction temperature fluctuation of an Insulated Gate Bipolar Transistor (IGBT) is the most important factor of its aging failure, and smoothing the fluctuation is an effective way to improve the life of an IGBT. The existing method of smoothing the fluctuation is not yet ready wide application, and exploring the different approaches to active ...
Bo Wang +3 more
openaire +1 more source
Temperature rise of solid junctions
Electrical Engineering, 1958SEMICONDUCTOR DEVICES always contain a junction; i.e., a plane zone of vanishing thickness. Current pulses through the device generate heat, mostly in the zone, from which it diffuses into the adjoining metallic body. Heat causes an increase of temperature in the junction, depending on the size of the current pulse and the rate of heat dissipation ...
openaire +1 more source
Transient junction temperatures in power transistors
Electrical Engineering, 1960Very little information is presently available on transistor junction temperatures for pulsed input waveforms. In the study described, a simple thermal model of a power transistor is assumed and a heat-flow analysis of the model, using Laplace transforms, is made.
W. W. Grannemann, J. D. Reese
openaire +1 more source
The periodic variation of junction temperature in a transistor
Proceedings of the IEE Part B: Electronic and Communication Engineering, 1962The instantaneous junction temperature of a transistor used as a class B amplifier is considered from very low frequencies, when the temperature is shown to follow a law similar to that of the instantaneous dissipation at the junction, to high frequencies, when the junction temperature attains a mean value which is constant throughout the cycle.
E.C. Bell, D.A. German, G.W. Parkinson
openaire +1 more source
High Temperature Superconducting Junctions
1990Some aspects of the Physics of high-temperature superconducting junctions are discussed. More recent results are outlined which may cast some light on the whole topic indicating, in spite of the severe material constraints, an encouraging trend.
openaire +1 more source