Results 221 to 230 of about 252,126 (263)
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SIN tunnel junction as a temperature sensor
SPIE Proceedings, 1999The current-voltage characteristics of a superconductor-normal metal tunnel junction (SIN) is very sensitive to the temperature of the normal metal. Therefore SIN junction can be used as a thermometer which can be conveniently integrated into more complicated devices, for example bolometers.
D. Golubev +2 more
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Temperature dependence of thermopower in molecular junctions
Applied Physics Letters, 2016The thermoelectric properties of molecular junctions are of considerable interest due to their promise for efficient energy conversion. While the dependence of thermoelectric properties of junctions on molecular structure has been recently studied, their temperature dependence remains unexplored.
Youngsang Kim +3 more
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MMC Power Device Loss and Junction Temperature Calculation Considering Junction Temperature Feedback
2022 IEEE International Conference on High Voltage Engineering and Applications (ICHVE), 2022Rongliang Zheng +4 more
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Estimating the junction temperature of AC LEDs
SPIE Proceedings, 2010Light-emitting diodes operating on alternating current are gaining popularity in the LED industry, especially for lighting applications. Because junction temperature is a good predictor of LED performance, the availability of a method to accurately estimate the junction temperature of AC LEDs would be very useful. This study investigated a method in
Yi-wei Liu +3 more
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High-temperature Josephson junctions and their applications
Cryogenics, 1992Abstract Manufacturable Josephson junctions with grain-boundary and proximity barriers made it possible to demonstrate SQUID sensors having energy resolutions approaching those of commercial low-temperature SQUIDs. Results indicate that the field sensitivity of HTS SQUIDs is already adequate for most magnetometer applications.
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Accurate Calculation of Junction Temperature of HBTs
IEEE Transactions on Microwave Theory and Techniques, 2011Heterojunction bipolar transistors (HBTs) offer high power and linearity for microwave and mixed-signal applications. The large-signal performance of an HBT is frequently limited by the maximum operating current, which is set by thermal considerations.
Ali M. Darwish +3 more
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Temperature Dependence of Junction Transistor Parameters
Proceedings of the IRE, 1957Based on existing design theories and the known temperature behavior of the semiconductor properties, the temperature variations of transistor characteristics are calculated for four representative types. The results, expressed in terms of four-pole parameters and equivalent circuits, may serve as a guide line in transistor design and temperature ...
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Analysis of Junction Temperature of AlGaInP LED
Key Engineering Materials, 2018Based on the material properties of AlGaInP LED, this paper proposes an approach for predicting the junction temperature. The junction temperature of AlGaInP LED predicted from this study agrees with the available experimental data. The junction temperature increases with increasing the injection current and substrate thickness of LED.
Song Feng Wan +4 more
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Temperature-gradient instabilities in semiconductor junctions
Physical Review B, 1975A new type of instability is shown to occur if a temperature gradient is present across a $n{n}^{+}$, $p{p}^{+}$, or $pn$ junction with no voltage applied. The critical temperature gradient depends on the size and steepness of the junction and is smaller for large and less abrupt junctions.
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Junction temperature analysis of IGBT devices
Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435), 2002The junction temperature of IGBT is the key factors that could influence the whole system's reliability and efficiency. An electro-thermal method was implemented to estimate the junction temperature of IGBT devices in this paper. The junction temperature of power devices was found out based on the power losses of IGBT devices and the transient thermal ...
null Zhiguo Pan +6 more
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