Results 221 to 230 of about 251,703 (265)

Temperature rise of solid junctions

Electrical Engineering, 1958
SEMICONDUCTOR DEVICES always contain a junction; i.e., a plane zone of vanishing thickness. Current pulses through the device generate heat, mostly in the zone, from which it diffuses into the adjoining metallic body. Heat causes an increase of temperature in the junction, depending on the size of the current pulse and the rate of heat dissipation ...
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Transient junction temperatures in power transistors

Electrical Engineering, 1960
Very little information is presently available on transistor junction temperatures for pulsed input waveforms. In the study described, a simple thermal model of a power transistor is assumed and a heat-flow analysis of the model, using Laplace transforms, is made.
W. W. Grannemann, J. D. Reese
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SIN tunnel junction as a temperature sensor

SPIE Proceedings, 1999
The current-voltage characteristics of a superconductor-normal metal tunnel junction (SIN) is very sensitive to the temperature of the normal metal. Therefore SIN junction can be used as a thermometer which can be conveniently integrated into more complicated devices, for example bolometers.
D. Golubev, Leonid S. Kuzmin, Magnus Willander   +2 more
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The periodic variation of junction temperature in a transistor

Proceedings of the IEE Part B: Electronic and Communication Engineering, 1962
The instantaneous junction temperature of a transistor used as a class B amplifier is considered from very low frequencies, when the temperature is shown to follow a law similar to that of the instantaneous dissipation at the junction, to high frequencies, when the junction temperature attains a mean value which is constant throughout the cycle.
E.C. Bell, D.A. German, G.W. Parkinson
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Temperature dependence of thermopower in molecular junctions

Applied Physics Letters, 2016
The thermoelectric properties of molecular junctions are of considerable interest due to their promise for efficient energy conversion. While the dependence of thermoelectric properties of junctions on molecular structure has been recently studied, their temperature dependence remains unexplored.
Youngsang Kim, Andrej Lenert, Edgar Meyhofer, Pramod Reddy   +3 more
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Estimating the junction temperature of AC LEDs

SPIE Proceedings, 2010
Light-emitting diodes operating on alternating current are gaining popularity in the LED industry, especially for lighting applications. Because junction temperature is a good predictor of LED performance, the availability of a method to accurately estimate the junction temperature of AC LEDs would be very useful. This study investigated a method in
Yi-wei Liu, Asiri Jayawardena, Terence R. Klein, Nadarajah Narendran   +3 more
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Accurate Calculation of Junction Temperature of HBTs

IEEE Transactions on Microwave Theory and Techniques, 2011
Heterojunction bipolar transistors (HBTs) offer high power and linearity for microwave and mixed-signal applications. The large-signal performance of an HBT is frequently limited by the maximum operating current, which is set by thermal considerations.
Ali M. Darwish, H. Alfred Hung, Andrew J. Bayba, Khaled El-Kinawi   +3 more
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Analysis of Junction Temperature of AlGaInP LED

Key Engineering Materials, 2018
Based on the material properties of AlGaInP LED, this paper proposes an approach for predicting the junction temperature. The junction temperature of AlGaInP LED predicted from this study agrees with the available experimental data. The junction temperature increases with increasing the injection current and substrate thickness of LED.
Song Feng Wan, Ching Yen Ho, Yong Gang Chen, Qing Bin Li, Fa Fen Yao   +4 more
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High-temperature Josephson junctions and their applications

Cryogenics, 1992
Abstract Manufacturable Josephson junctions with grain-boundary and proximity barriers made it possible to demonstrate SQUID sensors having energy resolutions approaching those of commercial low-temperature SQUIDs. Results indicate that the field sensitivity of HTS SQUIDs is already adequate for most magnetometer applications.
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Junction temperature analysis of IGBT devices

Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435), 2002
The junction temperature of IGBT is the key factors that could influence the whole system's reliability and efficiency. An electro-thermal method was implemented to estimate the junction temperature of IGBT devices in this paper. The junction temperature of power devices was found out based on the power losses of IGBT devices and the transient thermal ...
null Zhiguo Pan, null Xinjian Jiang, null Haiwei Lu, null Lipei Huang, S. Azuma, M. Kimata, M. Seto   +6 more
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