Results 231 to 240 of about 251,703 (265)
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High Temperature Superconducting Junctions
1990Some aspects of the Physics of high-temperature superconducting junctions are discussed. More recent results are outlined which may cast some light on the whole topic indicating, in spite of the severe material constraints, an encouraging trend.
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MMC Power Device Loss and Junction Temperature Calculation Considering Junction Temperature Feedback
2022 IEEE International Conference on High Voltage Engineering and Applications (ICHVE), 2022Rongliang Zheng +4 more
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Temperature-gradient instabilities in semiconductor junctions
Physical Review B, 1975A new type of instability is shown to occur if a temperature gradient is present across a $n{n}^{+}$, $p{p}^{+}$, or $pn$ junction with no voltage applied. The critical temperature gradient depends on the size and steepness of the junction and is smaller for large and less abrupt junctions.
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Room-temperature resistance switching and temperature hysteresis of Pr0.7Ca0.3MnO3 junctions
Journal of Applied Physics, 2005Current–voltage (I–V) characteristics of Ag∕Pr0.7Ca0.3MnO3(PCMO)∕YBa2Cu3O7−δ(YBCO) junctions fabricated on LaAlO3 (001) substrates were measured. Nonlinear, asymmetric, and hysteretic I–V curves, that are considered to be the nature of the resistance memory effect previously reported, were observed.
Joe Sakai, Syozo Imai
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Nerve, muscle, and neuromuscular junction electrophysiology at high temperature
Muscle & Nerve, 1997Although the effect of low temperature on the peripheral nervous system has been systematically studied, the effect of high temperature has not. We investigated the effect of elevating limb temperature from 32 degrees C to 42 degrees C by performing sequential motor studies, antidromic sensory studies, and 3-Hz repetitive stimulation in normal subjects.
S B, Rutkove, M J, Kothari, J M, Shefner
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A non-invasive method to extract the junction temperature of IGBT
IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, 2019Insulated gate bipolar transistors (IGBT) are used broadly in DC power transmission, power converters, and drives. These applications are cost-sensitive and require high module reliability. Researchers have been found that IGBT degradation over time is directly dependent on its junction temperature.
Rajashree Biswas +2 more
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Temperature Dependence of Junction Transistor Parameters
Proceedings of the IRE, 1957Based on existing design theories and the known temperature behavior of the semiconductor properties, the temperature variations of transistor characteristics are calculated for four representative types. The results, expressed in terms of four-pole parameters and equivalent circuits, may serve as a guide line in transistor design and temperature ...
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New Method of Monitoring Junction Temperature
IEEE Transactions on Instrumentation and Measurement, 1971A variation of the pulse method of junction temperature measurement is presented. The new technique allows the junction temperature of diodes and transistors under stress test to be monitored by a simple procedure. An expression for correcting junction to case thermal resistances, obtained via the steady-state h rb method, for nonthermal effects is ...
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Temperature Dependence and Lifetime in Semiconductor Junctions
Journal of Applied Physics, 1959The temperature dependence of a semiconductor p-n junction over a given temperature range can be held to a minimum by using material with a minority carrier lifetime below a certain maximum value. The first-order temperature dependence of the junction currents is then iαe−Eg/2kT, rather than iαe−Eg/kT, over the entire operating temperature range ...
D. A. Jenny, J. J. Wysocki
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IGBT junction and coolant temperature estimation by thermal model
Microelectronics Reliability, 2018Abstract The capability of IGBT (Insulated Gate Bipolar Transistor) to handle heat is one of its main limitations of high power application. This paper aims to study an IGBT thermal model under flow cooling condition and estimate the IGBT module junction and coolant temperature.
Zhihong Wu, Su Xiezu, Zhu Yuan
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