Results 251 to 260 of about 611,519 (305)

High temperature CoSb3–Cu junctions

Microelectronics Reliability, 2011
Abstract The subject of this work is to develop contact joints between a CoSb3 thermoelectric material and a copper electrode. The CoSb3–Cu junctions were produced by the resistance brazing (RB) technique in the atmosphere of protective gases (90% Ar + 10% H2), with the application of Ag–Cu metal fillers.
Krzysztof Tomasz Wojciechowski, Rafal Zybala, Ryszard Mania   +2 more
openaire   +1 more source

Investigations on junction temperature estimation based on junction voltage measurements

Microelectronics Reliability, 2010
Reliability and ageing tests on power semiconductor devices require estimation of junction temperatures in order to control thermal stresses and monitor failure criteria. For this purpose, thermo-electrical parameters, such as voltage forward drop dependence with temperature are usually carried out in low injection level.
Z. Khatir, L. Dupont, A. Ibrahim
openaire   +1 more source

SiC Device Junction Temperature Online Monitoring

2018 IEEE Energy Conversion Congress and Exposition (ECCE), 2018
This paper presents a SiC device junction temperature monitoring method. The device internal gate resistance has a consistent temperature dependence. With different junction temperature conditions, the equivalent gate loop impedance will be different and change the gate driver currents.
Ruxi Wang, Juan Sabate, Krishna Mainali, Tomas Sadilek, Peter Losee, Yash Singh   +5 more
openaire   +1 more source

Transient junction temperatures in power transistors

Electrical Engineering, 1960
Very little information is presently available on transistor junction temperatures for pulsed input waveforms. In the study described, a simple thermal model of a power transistor is assumed and a heat-flow analysis of the model, using Laplace transforms, is made.
W. W. Grannemann, J. D. Reese
openaire   +1 more source

Junction temperature analysis of IGBT devices

Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435), 2002
The junction temperature of IGBT is the key factors that could influence the whole system's reliability and efficiency. An electro-thermal method was implemented to estimate the junction temperature of IGBT devices in this paper. The junction temperature of power devices was found out based on the power losses of IGBT devices and the transient thermal ...
null Zhiguo Pan, null Xinjian Jiang, null Haiwei Lu, null Lipei Huang, S. Azuma, M. Kimata, M. Seto   +6 more
openaire   +1 more source

Temperature rise of solid junctions

Electrical Engineering, 1958
SEMICONDUCTOR DEVICES always contain a junction; i.e., a plane zone of vanishing thickness. Current pulses through the device generate heat, mostly in the zone, from which it diffuses into the adjoining metallic body. Heat causes an increase of temperature in the junction, depending on the size of the current pulse and the rate of heat dissipation ...
openaire   +1 more source