Results 271 to 280 of about 611,519 (305)

Temperature Dependence of Junction Transistor Parameters

Proceedings of the IRE, 1957
Based on existing design theories and the known temperature behavior of the semiconductor properties, the temperature variations of transistor characteristics are calculated for four representative types. The results, expressed in terms of four-pole parameters and equivalent circuits, may serve as a guide line in transistor design and temperature ...
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Predicting IGBT junction temperature under transient condition

Industrial Electronics, 2002. ISIE 2002. Proceedings of the 2002 IEEE International Symposium on, 2002
In this paper, a new method to predict the junction temperature of a solid-state switch under transient conditions is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device. The method for deriving thermal model parameters from the manufacturers data sheet is derived and verified.
M.M.R. Ahmed, G.A. Putrus, L. Ran
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Temperature-dependent conductivity of ultrasmall Josephson junctions

Nanotechnology, 1999
In this paper we analyse the transport properties of Josephson junctions embedded in an electromagnetic environment caused by pads and leads near to the junctions. At sufficiently low temperatures we find that the conductivity of the Josephson junctions at low bias is strongly suppressed due to the Coulomb blockade of Cooper pair tunnelling.
X H Wang, K A Chao
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High-temperature superconductor vertically-stacked Josephson junctions

Superconductor Science and Technology, 2002
We study vertically-stacked interface-treated Josephson junctions (ITJs). The barriers of ITJs are formed by Ar ion etching and subsequent annealing, not by depositing an artificial barrier. We have investigated the dependences of the junction properties on the processing parameters.
Y Yoshinaga, T Kito, S Izawa, M Maruyama, M Inoue, A Fujimaki, H Hayakawa   +6 more
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Steady-state junction temperatures of semiconductor chips

IEEE Transactions on Electron Devices, 1972
The temperature drop between a transistor junction and the base of a silicon chip is dependent upon the power to be dissipated as well as the geometry of the device. This problem in three-dimensional heat conduction is analytically solved for boundary conditions which approximate a set of operating conditions.
R.D. Lindsted, R.J. Surty
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Computer calculation of liquid-junction potentials—III. Temperature-dependence of junction potentials

Electrochimica Acta, 1992
Abstract Junction potentials for KCl(4M)‖X where X is one of NaCl, LiCl, NaOH, HCl, Li 2 SO 4 , Mg(NO 3 ) 2 , LaCl 3 ranging in concentration from 0.001 to 4 M have been calculated at 0, 25, 100°C by using the simulation and numerical methods of Parts I and II [J. Bagg, Electrochim. Acta 35 , 361, 367 (1990)]. Junction potentials ranged from −36.2
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Maximum Junction Temperatures of SiC Power Devices

IEEE Transactions on Electron Devices, 2009
This paper presents a detailed physical analysis on the junction temperatures, thermal stabilities, and thermal runaway effects of self-heating unipolar SiC power devices. Results reveal that the risk of thermal runaway could limit the usable junction temperature of these SiC devices to substantially lower than 200°C, regardless of the device size and ...
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Temperature Behavior of P-N Junction Detectors

IRE Transactions on Nuclear Science, 1961
For practical considerations improved resolution together with higher operating limits can be realized for shallow-diffused junction detectors operated in the temperature range from approximately 0°C to - 70°C. Detectors used above 50°C will usually show large amounts of deterioration of resolution.
R. J. Grainger, J. W. Mayer, J. W. Oliver   +2 more
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Intrinsic Josephson junctions in high temperature superconductors

Journal of Low Temperature Physics, 1997
Cuprate superconductors have a layered crystal structure consisting of some nearby \(\mathrm{CuO}_2\) sheets which are separated from the next group of \(\mathrm{CuO}_2\) sheets by blocking layers. Cooper pairs form in the \(\mathrm{CuO}_2\) sheets. For the most anisotropic compounds such as \(\mathrm{Bi}_{2}\mathrm{Sr}_{2}\mathrm{CaCu}_{2}\mathrm{O}_8\
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High-temperature Josephson junctions and their applications

Cryogenics, 1992
Abstract Manufacturable Josephson junctions with grain-boundary and proximity barriers made it possible to demonstrate SQUID sensors having energy resolutions approaching those of commercial low-temperature SQUIDs. Results indicate that the field sensitivity of HTS SQUIDs is already adequate for most magnetometer applications.
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