Results 261 to 270 of about 611,519 (305)
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Junction Temperatures under Breakdown Condition
Japanese Journal of Applied Physics, 1969A method of determining the junction temperature under breakdown condition is described. The junction temperature T 1 is calculated from the applied voltage and the current in the following equation: V 1=V B0·{1+β(T 1-T 0)}+I
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Emitter-junction temperature measurement under nonuniform current and temperature distribution
IEEE Transactions on Electron Devices, 1976A computer analysis of the temperature dependence of emitter junction voltage under an assumed nonuniform temperature distribution is presented, which demonstrates a temperature averaging effect when using junction voltage as an indicator of junction temperature.
V.C. Alwin, D.H. Navon
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Room-temperature resistance switching and temperature hysteresis of Pr0.7Ca0.3MnO3 junctions
Journal of Applied Physics, 2005Current–voltage (I–V) characteristics of Ag∕Pr0.7Ca0.3MnO3(PCMO)∕YBa2Cu3O7−δ(YBCO) junctions fabricated on LaAlO3 (001) substrates were measured. Nonlinear, asymmetric, and hysteretic I–V curves, that are considered to be the nature of the resistance memory effect previously reported, were observed.
Joe Sakai, Syozo Imai
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High Temperature Superconducting Junctions
1990Some aspects of the Physics of high-temperature superconducting junctions are discussed. More recent results are outlined which may cast some light on the whole topic indicating, in spite of the severe material constraints, an encouraging trend.
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New Method of Monitoring Junction Temperature
IEEE Transactions on Instrumentation and Measurement, 1971A variation of the pulse method of junction temperature measurement is presented. The new technique allows the junction temperature of diodes and transistors under stress test to be monitored by a simple procedure. An expression for correcting junction to case thermal resistances, obtained via the steady-state h rb method, for nonthermal effects is ...
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High-temperature superconducting Josephson junction devices
SPIE Proceedings, 1991The reasons for the failure to develop a successful Josephson tunnel junction made from high-temperature superconducting cuprates is discussed. The difficulties in developing a theoretical analysis of even simple-to-make cuprate Josephson devices are pointed out.
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Analysis of Junction Temperature of AlGaInP LED
Key Engineering Materials, 2018Based on the material properties of AlGaInP LED, this paper proposes an approach for predicting the junction temperature. The junction temperature of AlGaInP LED predicted from this study agrees with the available experimental data. The junction temperature increases with increasing the injection current and substrate thickness of LED.
Song Feng Wan +4 more
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Temperature-gradient instabilities in semiconductor junctions
Physical Review B, 1975A new type of instability is shown to occur if a temperature gradient is present across a $n{n}^{+}$, $p{p}^{+}$, or $pn$ junction with no voltage applied. The critical temperature gradient depends on the size and steepness of the junction and is smaller for large and less abrupt junctions.
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Junction-isolated CMOS for high-temperature microelectronics
IEEE Transactions on Electron Devices, 1989Latchup susceptibility over a temperature range of 25-315 degrees C for variations on a 1.2- mu m CMOS process is studied. A special high-performance process, including all refractory metallization, thinner epi, and higher doping levels, resulted in metal-migration immunity and doubling of the latchup holding voltage and current at 300 degrees C. >
R.B. Brown +5 more
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MMC Power Device Loss and Junction Temperature Calculation Considering Junction Temperature Feedback
2022 IEEE International Conference on High Voltage Engineering and Applications (ICHVE), 2022Rongliang Zheng +4 more
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