Results 231 to 240 of about 25,733 (269)
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Electrochimica Acta, 2007
With the introduction of a Kelvin probe mode to atomic force microscopy, the so called scanning Kelvin probe force microscopy (SKPFM), the Kelvin probe technique finds application in a steadily increasing number of different fields, from corrosion science to microelectronics and biosciences.
Rohwerder, M., Turcu, E.
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With the introduction of a Kelvin probe mode to atomic force microscopy, the so called scanning Kelvin probe force microscopy (SKPFM), the Kelvin probe technique finds application in a steadily increasing number of different fields, from corrosion science to microelectronics and biosciences.
Rohwerder, M., Turcu, E.
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Kelvin probe force microscopy of beveled semiconductors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002For the first time, we present the results of Kelvin probe force microscope studies on beveled samples. The ease of sample preparation and simplicity of the measurement make this technique a good candidate for the rapid characterization of semiconductor multilayers.
R. S. Ferguson, K. Fobelets, L. F. Cohen
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Applied Physics Letters, 2019
In this letter, we measured the thickness of an accumulation layer (dacc) in amorphous Indium-Gallium-Zinc-Oxide thin-film transistors (TFTs) using Kelvin Probe Force Microscopy (KPFM).
Xuewen Shi +8 more
semanticscholar +1 more source
In this letter, we measured the thickness of an accumulation layer (dacc) in amorphous Indium-Gallium-Zinc-Oxide thin-film transistors (TFTs) using Kelvin Probe Force Microscopy (KPFM).
Xuewen Shi +8 more
semanticscholar +1 more source
Kelvin Probe Force Microscopy Imaging Using Carbon Nanotube Probe
Japanese Journal of Applied Physics, 2001We have measured the potential profiles of the contact potential difference (CPD) between Al-evaporated substrates and dispersed carbon nanotubes (CNTs) by Kelvin probe force microscopy (KFM) using both a conventional Au-coated Si (Au–Si) probe and a CNT probe.
Satoru Takahashi +3 more
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Preventing probe induced topography correlated artifacts in Kelvin Probe Force Microscopy
Ultramicroscopy, 2016Kelvin Probe Force Microscopy (KPFM) on samples with rough surface topography can be hindered by topography correlated artifacts. We show that, with the proper experimental configuration and using homogeneously metal coated probes, we are able to obtain amplitude modulation (AM) KPFM results on a gold coated sample with rough topography that are free ...
Polak, L., Wijngaarden, Rinke J.
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Kelvin Probe Force Microscopy with Atomic Resolution
2018The surface potential distribution measured using Kelvin probe force microscopy (KPFM) is influenced by the contact potential difference (CPD) between the tip and surface, the stray capacitance of the cantilever, and fixed monopole charges on the surface and tip. The interpretation of atomic-scale KPFM contrast studies has been controversial.
Yan Jun Li +5 more
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Force gradient sensitive detection in lift-mode Kelvin probe force microscopy
Nanotechnology, 2011We demonstrate frequency modulation Kelvin probe force microscopy operated in lift-mode under ambient conditions. Frequency modulation detection is sensitive to force gradients rather than forces as in the commonly used amplitude modulation technique.
Dominik, Ziegler, Andreas, Stemmer
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KELVIN PROBE FORCE MICROSCOPY OF MOLECULAR SURFACES
Annual Review of Materials Science, 1999▪ Abstract The electrostatic force microscope is one of many specialized tip sensors used in near-field microscopy. This type of microscope is realized by applying a voltage on a conducting AFM tip. It can be used to image samples that present a distribution of electrical properties on inhomogeneous materials as well as on nanostructures.
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Quantitative Analysis of Kelvin Probe Force Microscopy on Semiconductors
2018As is well known, Kelvin Probe Force Microscopy (KPFM) is a powerful and versatile tool to measure the contact potential difference (CPD) in metals. Here, we discuss the application of KPFM for the investigation of semiconducting materials, where the interpretation of KPFM is complicated by band bending and surface charge.
Polak, Leo, Wijngaarden, Rinke J.
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