Results 181 to 190 of about 3,543 (201)
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Design a reliable LDMOS module for aonic application
ICMMT 4th International Conference on, Proceedings Microwave and Millimeter Wave Technology, 2004., 2005This paper describes a design technique of LDMOS module for avionics and military application. These techniques are particularly oriented in theories and computer aided design. We introduce a practical external matching network design topology to achieve a smaller physical size using microstrip line. The circuit analysis used both transmission line and
null Cang Nguyen, L. He
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Modeling Kirk effect of RESURF LDMOS
Solid-State Electronics, 2005Two-dimensional surface electric field in the drift region of RESURF LDMOS is modeled in the off-state and on-state. Numerical results are shown to support the analytical results. Based on these results, 3-D Kirk effect is modeled. The reason inducing high electric field near the drain is demonstrated and methods to lower the high electric field are ...
Zhilin Sun, Weifeng Sun, Longxing Shi
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The thermal effects in LDMOS transistor
14th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2002. Conference Proceedings (IEEE Cat.No.02EX562), 2003This paper describes development of thermal LDMOS model based on the solution of heat conducting equation (HCE) by means of 3D FDTD thermal method. This thermal analysis co-operates with electrical LDMOS model implemented in Agilent's program (ADS). The elaborated temperature-dependent microwave LDMOS model will be used to design high power amplifiers ...
R. Michnowski, W. Wojtasiak
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Hot carrier reliability in LDMOS devices
2017 IEEE 12th International Conference on ASIC (ASICON), 2017This paper discusses hot carrier (HC) reliability in LDMOS devices. First we review various HC degradation mechanisms for LDMOS devices. Then we discuss how to reduce HC degradation in LDMOS devices.
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LDMOS Technology for RF Power Amplifiers
IEEE Transactions on Microwave Theory and Techniques, 2012We show the status of laterally diffused metal-oxide-semiconductor (LDMOS) technology, which has been the device of choice for RF power applications for more than one decade. LDMOS fulfills the requirements for a wide range of class AB and pulsed applications, such as base station, broadcast, and microwave. We present state-of-the-art RF performance of
S. J. C. H. Theeuwen, J. H. Qureshi
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Thermal Conductivity of SOI LDMOS Device
Advanced Materials Research, 2012In this paper, the thermal conductivity of lateral double diffused metal oxide semiconductor (LDMOS) was studied. In order to optimize their properties, the LDMOS device based on the lower surface of field (RESURF) theory join the second field plate technology.
Yan Xiong, Yu Shu Lai
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Ultra-thin RF LDMOS Power Transistors
2002 32nd European Microwave Conference, 2002We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a proprietary process, we fabricated such devices with a thickness as reduced as 40?m. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations ...
J.A. Herbsommer +5 more
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A Review of Super Junction LDMOS
IETE Technical Review, 2011AbstractSuper Junction Lateral Double-diffused MOSFET (SJ-LDMOS) is one of the important attractive devices in high-voltage integrated circuit and power integrated circuit. However, the SJ-LDMOS is generally implemented on a low-resistance substrate, which always suffers from substrate-assisted depletion (SAD) effect, which thus degrades the ...
Chen Hu +3 more
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A Rugged LDMOS for LBC5 Technology
Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005., 2005This paper presents a new method of enhancing the SOA of n-channel Ldmos transistors. Attention is focused on those applications where “Electrical SOA” is important and where the power pulse time is typically a few µs or less. Typical applications include gate drives, H-bridge commutation, and self-protection against ESD pulses.
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Characterization and Modeling of High-Voltage LDMOS Transistors
2014This chapter introduces integrated power devices and their reliability issues. The lateral double-diffused MOS (LDMOS) transistors are widely used in mixed-signal circuit design as integrated high-voltage switches and drivers. The LDMOS with shallow-trench isolation (STI) is the device of choice to achieve voltage and current capability integrated in ...
REGGIANI, SUSANNA +10 more
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