Results 11 to 20 of about 499,969 (291)

Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy [PDF]

PHYSICAL REVIEW MATERIALS, 2020
The field of magnon spintronics is experiencing an increasing interest in the development of solutions for spin-wave-based data transport and processing technologies that are complementary or alternative to modern CMOS architectures.
Carsten Dubs, A. B. Surzhenko, R. Thomas, Julia Osten, Tobias M. Schneider, K. Lenz, J. Grenzer, René Hübner, E. Wendler   +8 more
openalex   +3 more sources

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy. [PDF]

Sci Rep, 2015
Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by ...
Zhou S, Liu F, Prucnal S, Gao K, Khalid M, Baehtz C, Posselt M, Skorupa W, Helm M.   +8 more
europepmc   +3 more sources

Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020
Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering.
Vadym Tsybulenko, Stanislav Shutov
doaj   +1 more source

A novel series of isoreticular metal organic frameworks: realizing metastable structures by liquid phase epitaxy. [PDF]

Sci Rep, 2012
A novel class of metal organic frameworks (MOFs) has been synthesized from Cu-acetate and dicarboxylic acids using liquid phase epitaxy. The SURMOF-2 isoreticular series exhibits P4 symmetry, for the longest linker a channel-size of 3 × 3 nm2 is obtained,
Liu J, Lukose B, Shekhah O, Arslan HK, Weidler P, Gliemann H, Bräse S, Grosjean S, Godt A, Feng X, Müllen K, Magdau IB, Heine T, Wöll C.   +13 more
europepmc   +2 more sources

Technological features of the method of liquid-phase epitaxy when growing InP/GaInAsP heterostructures

Конденсированные среды и межфазные границы, 2021
Semiconductor devices of quantum electronics based on InP/GaInAsP heterostructures require the creation of non-defective chips for emitting devices and photodetectors.
Mikhail G. Vasil’ev, Anton M. Vasil’ev, Alexander D. Izotov, Yuriy O. Kostin, Alexey A. Shelyakin   +4 more
doaj   +1 more source

Liquid‐Phase Quasi‐Epitaxial Growth of Highly Stable, Monolithic UiO‐66‐NH2 MOF thin Films on Solid Substrates

ChemistryOpen, 2020
High quality, monolithic UiO‐66‐NH2 thin films on diverse solid substrates have been prepared via a low temperature liquid phase epitaxy method. The achievement of continuous films with low defect densities and great stability against high temperatures ...
Dr. Tawheed Hashem, Dr. Elvia P. Valadez Sánchez, Dr. Peter G. Weidler, Dr. Hartmut Gliemann, Dr. Mohamed H. Alkordi, Prof. Christof Wöll   +5 more
doaj   +2 more sources

Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy

Applied Sciences, 2020
Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic ...
Aditya Prabaswara, Jens Birch, Muhammad Junaid, Elena Alexandra Serban, Lars Hultman, Ching-Lien Hsiao   +5 more
doaj   +1 more source

Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016
Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub ...
F.F. Sizov
doaj   +1 more source

The correlation between parameters of gallium arsenic epitaxy layers and technology of growth’s process [PDF]

Технологія та конструювання в електронній апаратурі, 2009
The correlation between mobility and carriers concentration and growth’s conditions of gallium arsenic layers by liquid phase epitaxy is established. It is possible to obtain layers with required mobility and concentration of charge carriers by changing ...
A. V. Karimov, D. M. Yodgorova, E. N. Yakubov   +2 more
doaj   +1 more source

Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications

Energies, 2022
The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs substrates were investigated in a comparative plan with a view of their possible application in multi-junction solar cells.
Vesselin Donchev, Malina Milanova, Stefan Georgiev   +2 more
doaj   +1 more source