Results 41 to 50 of about 499,969 (291)

Chiral SURMOFs for Vibrational Circular Dichroism: Multiscale Modeling and Experimental Insights

Advanced Functional Materials, EarlyView.
The use of solid‐state vibrational circular dichroism (VCD) for MOFs is still somewhat unexplored, and in this work, it is shown that chiral surface‐anchored MOFs (SURMOFs) grown on CaF2 provide an excellent platform for VCD. Experimental results are validated through multiscale modeling, showing strong agreement across multiple spectroscopic ...
Ana C. Fingolo, Nadine von Coelln, Benedikt Zerulla, Marjan Krstić, Christian Huck, Thomas G. Mayerhöfer, Christoph Krafft, Petra Tegeder, Carsten Rockstuhl, Christof Wöll   +9 more
wiley   +1 more source

Heterostructures on the basis of GaAs with quantum points of InAs for photo-electric transformers [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008
Heterostructures based on GaAs with InAs quantum dots obtained in the process of liquid-phase epitaxy by the method of pulse cooling of saturated solution in indium or heterostructures containing quantum dots in the area of the p–n-junction were much ...
Maronchuk I. E., Dobrozhanskiy Yu. A.
doaj  

Role of Liquid Composition in the Transient Liquid Assisted Growth of Superconducting YBa2Cu3O7‐δ Films

Advanced Materials, EarlyView.
The Y supersaturation in the [Ba‐Cu(I/II)‐O] transient liquid composition is the driving force toward YBCO nucleation and growth in TLAG. Tuning the initial (Ba:Cu) molar ratio in the ink composition determines the YBCO epitaxial nucleation through supersaturation control.
Lavinia Saltarelli, Diana García, Laia Soler, Elzbieta Pach, Kapil Gupta, Daniel Sanchez‐Rodriguez, Jordi Aguilar, Víctor Fuentes, Eduardo Solano, Cristian Mocuta, Jordi Farjas, Xavier Obradors, Teresa Puig   +12 more
wiley   +1 more source

Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020
We carried out the modelling of separate technological stages of scanning liquid phase epitaxy (SLPE) technique: wetting the substrate by the solution-melt using Ampere force, growing the epitaxial layer during a short-time contact between the substrate ...
V.V. Tsybulenko, S.V. Shutov, S.Yu. Yerochin   +2 more
doaj   +1 more source

Review of Thin Lithium Metal Battery Anode Fabrication – Microstructure – Electrochemistry Relations

Advanced Materials, EarlyView.
Thin, lightweight lithium‐metal anodes are pivotal for practical high‐energy batteries. This review surveys processing routes that convert diverse Li precursors, e.g., ingots, melts, solutions, and vapor, into Li‐rich foils with controlled thickness, areal density, and tailored functionality.
Yuhang Hu, Zidong Chen, Yixian Wang, Haorui Hou, Bingcheng Chen, David Mitlin, Wei Liu   +6 more
wiley   +1 more source

Obtaining of high-quality InP active layers in geterostructure’s composition for Gunn diodes [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2010
It is shown that for epitaxial InP layers obtained by liquid-phase epitaxy complex dopping of indium melts by optimal concentrations of rare-earth Yb and isovalent element Al promotes useful increase of cleaning effect from background impurities and ...
Vakiv M. M., Krukovskiy S. I., Zayachuk D. M., Mykhashchuk Iu. S., Krukovskiy R. S.   +4 more
doaj   +2 more sources

Non‐Destructive Laser Nanopatterning of Superconducting Heterostructures in Topological Sn Thin Films

Advanced Materials, EarlyView.
We demonstrate successful fabrication of high‐quality α‐Sn/β‐Sn planar nanostructures with arbitrary shapes by focused laser irradiation on topological Dirac semimetal α‐Sn thin films. The irradiated regions transform into atomically smooth, superconducting β‐Sn with a critical temperature of 3.7 K.
Le Duc Anh, Takahiro Saeki, Keita Ishihara, Daiki Nishigaki, Hideki Maki, Masaaki Tanaka   +5 more
wiley   +1 more source

Giant Berry‐phase‐Driven X‐Ray Beam Translations in Strain‐Engineered Semiconductor Crystals

Advanced Materials, EarlyView.
Due to the Berry‐phase effect, X‐rays propagating in deformed crystals undergo large translations, interesting for X‐ray optics applications. Here, the lattice expansion observed upon H irradiation of dilute‐nitride semiconductors is exploited to engineer the deformation landscape of selectively hydrogenated GaAsN epilayers.
Marco Felici, Giorgio Pettinari, Michela Fratini, Luisa Barba, Simone Birindelli, Gaetano Campi, Silvia Rubini, Tobias Schülli, Mario Capizzi, Antonio Polimeni   +9 more
wiley   +1 more source

Nanoscale Ga/Al substituted yttrium iron garnet films by liquid phase epitaxy

AIP Advances
Yttrium iron garnet (YIG) has minimum damping factor and low ferromagnetic resonance (FMR) linewidth, making it a preferred material for low loss microwave and spintronic devices.
Yuanjing Zhang, Qiang Xue, Feng Wang, Han Li, Zhuo Li, Shuting Yang, Yingli Liu, Aimin Hu, Lichuan Jin, Qiye Wen, Huaiwu Zhang, Qinghui Yang   +11 more
doaj   +1 more source

Performance Constraints of All‐Perovskite Tandem Solar Cells in Low‐Intensity, Low‐Temperature Environments

Advanced Materials, EarlyView.
All‐perovskite tandem solar cells are evaluated under low‐intensity and low‐temperature (LILT) conditions relevant to space environments. Distinct loss regimes emerge, where weaker entropic mixing causes halide segragation below ≈240 K going along with a strong current imbalance, while poor electron transport in C60 dominates.
Sercan Ozen, Etienne Beier, Francisco Peña‐Camargo, Jarla Thiesbrummel, Gianluca Boccarella, Paria Forozi Sowmeeh, Martin Stolterfoht, Dieter Neher, Kai Oliver Brinkmann, Thomas Riedl, Felix Lang   +10 more
wiley   +1 more source