Results 61 to 70 of about 26,029 (244)
Advanced Materials, EarlyView.We demonstrate successful fabrication of high‐quality α‐Sn/β‐Sn planar nanostructures with arbitrary shapes by focused laser irradiation on topological Dirac semimetal α‐Sn thin films. The irradiated regions transform into atomically smooth, superconducting β‐Sn with a critical temperature of 3.7 K.
Le Duc Anh +5 more
wiley +1 more source
2D materials and van der Waals heterostructures
, 2016 The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With new 2D materials, truly 2D physics has started to appear (e.g.
Carvalho, A. +3 more
core +1 more source
Giant Berry‐phase‐Driven X‐Ray Beam Translations in Strain‐Engineered Semiconductor Crystals
Advanced Materials, EarlyView.Due to the Berry‐phase effect, X‐rays propagating in deformed crystals undergo large translations, interesting for X‐ray optics applications. Here, the lattice expansion observed upon H irradiation of dilute‐nitride semiconductors is exploited to engineer the deformation landscape of selectively hydrogenated GaAsN epilayers.
Marco Felici +9 more
wiley +1 more source
Nanoscale Ga/Al substituted yttrium iron garnet films by liquid phase epitaxy
AIP AdvancesYttrium iron garnet (YIG) has minimum damping factor and low ferromagnetic resonance (FMR) linewidth, making it a preferred material for low loss microwave and spintronic devices.
Yuanjing Zhang +11 more
doaj +1 more source
Semiconductor diode laser material and devices with emission in visible region of the spectrum [PDF]
Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase
Kressel, H., Ladany, I.
core +1 more source
Advanced Materials, EarlyView.All‐perovskite tandem solar cells are evaluated under low‐intensity and low‐temperature (LILT) conditions relevant to space environments. Distinct loss regimes emerge, where weaker entropic mixing causes halide segragation below ≈240 K going along with a strong current imbalance, while poor electron transport in C60 dominates.
Sercan Ozen +10 more
wiley +1 more source
Advanced Materials, EarlyView.We show a giant, bias‐field free, deterministic, spin‐orbit‐torque switching of perpendicular hard magnets with HC over 1.3 T. By combining the three‐fold 3m symmetry from topological insulator surface states with the rectangular mm2 symmetry from the 2 x 1 intercalation in Cr3Te4, the interface symmetry is significantly reduced into a unidirectional m
He Ren +6 more
wiley +1 more source
CREATION AND INVESTIGATION OF PARAMETERS OF SEMICONDUCTOR DEVICES ON THE BASED AlAs-GaAs - FILMS
Вестник. Серия физическая, 2009 A cheap thin-film phototransducer with Аu/n - GaАs/n+ - GаАs/n – AlGaAs structure that was formed using a molten solution by the method of growth separation during liquid-phase epitaxy has been developed.
V. S. Antoschenko +3 more
doaj
, 2016 Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices.
Liang, Yu-Han, Nuhfer, T., Towe, Elias
core
Atomistic Understanding of 2D Monatomic Phase‐Change Material for Non‐Volatile Optical Applications
Advanced Science, EarlyView.Antimony is a promising monatomic phase‐change material. Scaling down the film thickness is necessary to prolong the amorphous‐state lifetime, but it alters the optical properties. The combined computational and experimental study shows that, as thickness decreases, the extinction coefficient and optical contrast are reduced in the near‐infrared ...
Hanyi Zhang +10 more
wiley +1 more source