Results 331 to 340 of about 4,254,343 (401)

Long term management of depression

European Psychiatry, 2002
openaire   +2 more sources

Electric Field‐Driven Conformational Changes in Molecular Memristor and Synaptic Behavior

Advanced Science, EarlyView.
Self‐assembled monolayers (SAMs) based molecular device is used for the emulation of synaptic functions. The device operates with a novel switching mechanism via incoherent charge transport, inducing conformational changes. With a low energy consumption (8.0 pJ µm−2), the system shows promise for neuromorphic computing, offering potential in low‐energy,
Chanjin Lim, Taegil Kim, YoungJu Park, Daeho Kim, ChaeHo Shin, Suji Ha, Jin‐Liang Lin, Yuan Li, Junwoo Park   +8 more
wiley   +1 more source

Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications

Advanced Electronic Materials, EarlyView.
By designing a four‐terminal α‐In2Se3 device, freely selective digital and analog resistive switching behavior is achieved. The oxygen plasma and gate modulation terminal enable optimized non‐volatile digital storage with low operating voltage, artificial synapses with high linearity, and dynamic range based on 128‐level analog conductance behavior ...
Siying Tian, Changhao Wang, Yuanjie Wang, Honghao Wang, Chenxi Gao, Weisen Hu, Jia Wei, Fengling Chen, Dapeng Sun, Xu Zheng, Chaobo Li, Chujun Yin   +11 more
wiley   +1 more source

Long-term treatment of bipolar depression

European Psychiatry, 2007
Vieta, Eduard, Goikolea, J. M.
openaire   +3 more sources

Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
In this study, a novel 1D lead‐free metal halide, K2CuBr3, composed of earth‐abundant elements, is introduced for resistive switching and artificial synapse devices. With exceptionally low production costs and minimal environmental impact, K2CuBr3 can be a promising candidate for sustainable memory storage and neuromorphic computing.
Zijian Feng, Jiyun Kim, Jie Min, Peiyuan Guan, Shuo Zhang, Xinwei Guan, Tingting Mei, Tianxu Huang, Chun‐Ho Lin, Long Hu, Fandi Chen, Zhi Li, Jiabao Yi, Tom Wu, Dewei Chu   +14 more
wiley   +1 more source

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

Advanced Electronic Materials, EarlyView.
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio, Rikhard Ranta, Sayani Majumdar   +2 more
wiley   +1 more source

Physical Reservoir Computing for Real‐Time Electrocardiogram Arrhythmia Detection Through Controlled Ion Dynamics in Electrochemical Random‐Access Memory

Advanced Electronic Materials, EarlyView.
This study presents an ECRAM‐based physical reservoir computing system for real‐time electrocardiogram arrhythmia detection. By optimizing electrolyte ionic conductivity and channel ionic diffusivity, it achieves including non‐linear dynamics, millisecond‐scale tunable retention, low‐power operation, and minimal variation.
Kyumin Lee, Dongmin Kim, Jongseon Seo, Hyunsang Hwang   +3 more
wiley   +1 more source

Long-term depression triggers the selective elimination of weakly integrated synapses

Proceedings of the National Academy of Sciences of the United States of America, 2013
J. Simon Wiegert, T. Oertner
semanticscholar   +1 more source

An Ultrathin Optoelectronic Memristor with Dual‐Functional Photodetector and Optical Synapse Behaviors for Neuromorphic Vision

Advanced Electronic Materials, EarlyView.
An optoelectronic memristor based on an ultrathin periodic heterostructure is proposed. The unique structure enables the integration of multiple functionalities, including those of a photodetector, electric synapse, and optical synapse. This work provides a framework to design ultrathin, multifunctional, and energy‐efficient neuromorphic chips for ...
Lilan Zou, Junru An, Haonan Xu, Guizhen Wang, Shiwei Lin   +4 more
wiley   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

Advanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang, Xuemeng Hu, Baifan Qian, Jiajie Yu, Zhenhai Li, Qingqing Sun, David Wei Zhang, Qingxuan Li, Lin Chen   +8 more
wiley   +1 more source