Results 101 to 110 of about 124,327 (319)

The impact of local pinning sites in magnetic tunnel junctions with non-homogeneous free layers

Communications Materials
Pinning at local defects is a significant road block for the successful implementation of technological paradigms which rely on the dynamic properties of non-trivial magnetic textures.
Alex. S. Jenkins, Leandro Martins, Luana C. Benetti, Alejandro Schulman, Pedro Anacleto, Marcel S. Claro, Ihsan Caha, Francis Leonard Deepak, Elvira Paz, Ricardo Ferreira   +9 more
doaj   +1 more source

Investigation of Halogen Substitution Effects in π‐Conjugated Organic Ligands of Chiral Hybrid Perovskites on Their Chiroptical Activity

Advanced Functional Materials, EarlyView.
The role of novel thiophene‐based ligands with halogen substitutions in enhancing the chiroptical and optoelectronic properties of 2D chiral HOIPs has been investigated. By tailoring ligand design, enhanced CD and CPL properties are achieved, with improved CPL discrimination in photodetectors.
Boesung Kwon, Doyeong Yeo, In‐Chul Hwang, In Hwan Jung, Joon Hak Oh   +4 more
wiley   +1 more source

Magnetic tunnel junction based on bilayer LaI2 as perfect spin filter device

npj 2D Materials and Applications
The discovery of van der Waals intrinsic magnets has expanded the possibilities of realizing spintronics devices. We investigate the transmission, tunneling magnetoresistance ratio, and spin injection efficiency of bilayer LaI2 using a combination of ...
Shubham Tyagi, Avijeet Ray, Nirpendra Singh, Udo Schwingenschlögl   +3 more
doaj   +1 more source

Detection of Small Magnetic Fields Using Serial Magnetic Tunnel Junctions with Various Geometrical Characteristics

Sensors, 2020
Thanks to their high magnetoresistance and integration capability, magnetic tunnel junction-based magnetoresistive sensors are widely utilized to detect weak, low-frequency magnetic fields in a variety of applications.
Zhenhu Jin, Yupeng Wang, Kosuke Fujiwara, Mikihiko Oogane, Yasuo Ando   +4 more
doaj   +1 more source

Spin-flip noise due to nonequilibrium spin accumulation

, 2015
When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned.
Coey, J. M. D., Feng, J. F., Guo, Huiqiang, Han, X. F., Li, D. L., Liu, Liang, Niu, Jiasen, Wei, Jian, Zhang, X. -G.   +8 more
core   +1 more source

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong, Juan Anthony Prayogo, Soobin Heo, Jae Sung Yun, Dong Ryeol Whang, Dong Wook Chang, Hui Joon Park   +6 more
wiley   +1 more source

Voltage-controlled magnetic anisotropy effect through a high-k MgO/ZrO2/MgO hybrid tunneling barrier

Applied Physics Express
We investigated the voltage-controlled magnetic anisotropy (VCMA) effect in epitaxial magnetic tunnel junctions (MTJs) with a hybrid MgO/ZrO _2 /MgO tunnel barrier.
Hiroshige Onoda, Tomohiro Nozaki, Takayuki Nozaki, Shinji Yuasa   +3 more
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Improving the Gain and Bandwidth of CMOS Circuits with Fe-MgO Tunnel Junctions

Electronics
This paper reports the influence of magnetic tunnel junctions on the electrical response of an operational amplifier (op-amp) circuit. As a baseline, the pure-CMOS operational amplifier has been designed using the 180 nm semiconductor process ...
Mayank Chakraverty, Valayathoor Ramakrishnan   +1 more
doaj   +1 more source

Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit

Nature
Antiferromagnetic spintronics1,2 shows great potential for high-density and ultrafast information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component that are typically formed from ferromagnetic materials, have seen rapid ...
Yuliang Chen, Kartik Samanta, N. A. Shahed, Haojie Zhang, Chi Fang, A. Ernst, E. Tsymbal, S. Parkin   +7 more
semanticscholar   +1 more source