Results 61 to 70 of about 60,446 (233)

New Mechanism of Magnetoresistance in Bulk Semiconductors: Boundary Condition Effects

, 1996
We consider the electronic transport in bounded semiconductors in the presence of an external magnetic field. Taking into account appropriate boundary conditions for the current density at the contacts, a change in the magnetoresistance of bulk ...
Akhieser, Bass, G. Gonzalez de la Cruz, Gurevich, Madelung, Sokolov, V.V. Prosentsov, Yu.G. Gurevich   +7 more
core   +2 more sources

Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr

Advanced Materials, EarlyView.
Biaxial compressive strain significantly enhances magnetoresistance and critical saturation fields in thin flakes of the 2D magnet CrSBr, along all three crystallographic axes. First‐principles calculations link these effects to strain‐induced increases in exchange interactions and magnetic anisotropy.
Eudomar Henríquez‐Guerra, Alberto M. Ruiz, Marta Galbiati, Álvaro Cortés‐Flores, Daniel Brown, Esteban Zamora‐Amo, Lisa Almonte, Andrei Shumilin, Juan Salvador‐Sánchez, Ana Pérez‐Rodríguez, Iñaki Orue, Andrés Cantarero, Andres Castellanos‐Gomez, Federico Mompeán, Mar Garcia‐Hernandez, Efrén Navarro‐Moratalla, Enrique Diez, Mario Amado, José J. Baldoví, M. Reyes Calvo   +19 more
wiley   +1 more source

Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings

, 2013
We report a numerical study on Aharonov-Bohm (AB) effect and giant magnetoresistance in rectangular rings made of graphene nanoribbons (GNRs). We show that in low energy regime where only the first subband of contact GNRs contributes to the transport ...
Dollfus, Philippe, Nguyen, Viet-Hung, Niquet, Yann-Michel   +2 more
core   +1 more source

Asymmetry of the Ferroelectric Phase Transition in BaTiO3

Advanced Materials, EarlyView.
Phase transitions are typically assumed to behave identically in forward and reverse. This work shows that in the ferroelectric material barium titanate this is not true: heating drives an abrupt, first‐order jump, while cooling gives a smooth, continuous change.
Asaf Hershkovitz, Elangovan Hemaprabha, Rajesh Mandal, Pravin Kavle, Jamil Tanus, Maya Barzilay, Ching‐Che Lin, David Spirito, Semën Gorfman, Bo Wang, Ignacio J. Villar‐García, Neus Domingo, Long‐Qing Chen, Lane W. Martin, Yachin Ivry   +14 more
wiley   +1 more source

Electrical Resistance and Magnetoresistance of Modified Carbon Nanotubes [PDF]

Журнал нано- та електронної фізики, 2014
The paper presents the results of the experimental studies of the magnetoresistance and electrical resistance of carbon nanotubes modified with iron and iron oxide.
T.A. Len, I.V. Ovsienko, L.Yu. Matzui, A.V. Tugay   +3 more
doaj  

Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

Beilstein Journal of Nanotechnology, 2017
We report light-induced negative organic magnetoresistance (OMAR) measured in ambient atmosphere in solution-processed 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) planar hybrid devices with two different device architectures.
Sreetama Banerjee, Daniel Bülz, Danny Reuter, Karla Hiller, Dietrich R. T. Zahn, Georgeta Salvan   +5 more
doaj   +1 more source

Magnetoresistance effect in a vertical spin valve fabricated with a dry-transferred CVD graphene and a resist-free process

Materials Research Express, 2020
One of the most prominent and effective applications of graphene in the field of spintronics is its use as a spacer layer between ferromagnetic metals in vertical spin valve devices, which are widely used as magnetic sensors.
Pradeep Raj Sharma, Praveen Gautam, Jungtae Nam, Keun Soo Kim, Hwayong Noh   +4 more
doaj   +1 more source

Magnetoresistance in quasi-one-dimensional metals due to Fermi surface cold spots [PDF]

, 2000
In a number of quasi-one-dimensional organic metals the dependence of the magnetoresistance on the direction of the magnetic field is quite different from the predictions of Boltzmann transport theory for a Fermi liquid with a scattering rate that is ...
McKenzie, Ross H., Moses, Perez
core   +2 more sources

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Linear magnetoresistance in a topological insulator Ru2Sn3

AIP Advances, 2017
We have studied magnetotransport properties of a topological insulator material Ru2Sn3. Bulk single crystals of Ru2Sn3 were grown by a Bi flux method. The resistivity is semiconducting at high temperatures above 160 K, while
Y. Shiomi, E. Saitoh
doaj   +1 more source