Results 41 to 50 of about 13,015 (262)

Memory circuit elements: from systems to applications

, 2010
In this paper, we briefly review the concept of memory circuit elements, namely memristors, memcapacitors and meminductors, and then discuss some applications by focusing mainly on the first class.
Di Ventra, M., Martinez-Rincon, J., Pershin, Y. V.   +2 more
core   +1 more source

Advances in Metal Halide Perovskite Memristors: A Review from a Co‐Design Perspective

Advanced Science
The memristor has recently demonstrated considerable potential in the field of large‐scale data information processing. Metal halide perovskites (MHPs) have emerged as the leading contenders for memristors due to their sensitive optoelectronic response ...
Bowen Jiang, Xiang Chen, Xiaoxin Pan, Li Tao, Yuangqiang Huang, Jiahao Tang, Xiaoqing Li, Peixiong Wang, Guokun Ma, Jun Zhang, Hao Wang   +10 more
doaj   +1 more source

Comprehensive Study of SDC Memristors for Resistive RAM Applications

Energies
Memristors have garnered considerable attention within the scientific community as devices for emerging construction of Very Large Scale Integration (VLSI) systems.
Bartłomiej Garda, Karol Bednarz
doaj   +1 more source

The Short-term Memory (D.C. Response) of the Memristor Demonstrates the Causes of the Memristor Frequency Effect

, 2014
A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity.
Adamatzky, Andrew, Costello, Ben de Lacy, Erokhin, Victor, Gale, Ella   +3 more
core   +1 more source

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

Window functions and sigmoidal behaviour of memristive systems [PDF]

, 2015
Summary: A common approach to model memristive systems is to include empirical window functions to describe edge effects and nonlinearities in the change of the memristance.
Barahona, M, Drakakis, EM, Georgiou, PS, Yaliraki, SN   +3 more
core   +1 more source

Ultrahigh‐Yield, Multifunctional, and High‐Performance Organic Memory for Seamless In‐Sensor Computing Operation

Advanced Functional Materials, EarlyView.
Molecular engineering of a nonconjugated radical polymer enables a significant enhancement of the glass transition temperature. The amorphous nature and tunability of the polymer, arising from its nonconjugated backbone, facilitates the fabrication of organic memristive devices with an exceptionally high yield (>95%), as well as substantial ...
Daeun Kim, Jaehyoung Ko, Namju Kim, Quynh H. Nguyen, Hoyeon Lee, Joohwan Eo, Seongeon Jin, Ji Eon Kwon, Seung‐Yeol Jeon, Youngdo Jeong, Dongseok Kwon, Sung Gap Im, Sanghan Lee, Byung Chul Jang, Yongho Joo   +14 more
wiley   +1 more source

Synaptic and Fast Switching Memristance in Porous Silicon-Based Structures

Nanomaterials, 2019
Memristors are two terminal electronic components whose conductance depends on the amount of charge that has flown across them over time. This dependence can be gradual, such as in synaptic memristors, or abrupt, as in resistive switching memristors ...
Vicente Torres-Costa, Ermei Mäkilä, Sari Granroth, Edwin Kukk, Jarno Salonen   +4 more
doaj   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Intelligent flexible memristors for artificial synapses and neuromorphic computing

FlexMat
Memristors have garnered significant attention in the field of non‐volatile memory devices due to their excellent characteristics such as miniaturization, low power consumption, high performance, and non‐volatility.
Qingyao Mao, Zhenqian Zhu, Jialin Meng, Tianyu Wang   +3 more
doaj   +1 more source