Results 51 to 60 of about 13,015 (262)

90% yield production of polymer nano-memristor for in-memory computing

Nature Communications, 2021
Though polymer memristors are promising for low‐power flexible edge computing applications, realizing efficient nanometer‐scale arrays remains a challenge.
Bin Zhang, Weilin Chen, Jianmin Zeng, Fei Fan, Junwei Gu, Xinhui Chen, Lin Yan, Guangjun Xie, Shuzhi Liu, Qing Yan, Seung Jae Baik, Zhi-Guo Zhang, Weihua Chen, Jie Hou, Mohamed E. El-Khouly, Zhang Zhang, Gang Liu, Yu Chen   +17 more
doaj   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Electronic and Photoelectronic Memristors Based on 2D Materials

Advanced Electronic Materials, 2022
Next‐generation memristive devices and neuromorphic computing have many fantastic properties in breaking down the memory walls of conventional von Neumann structures.
Kai Tang, Yang Wang, Chuanhui Gong, Chujun Yin, Miao Zhang, Xianfu Wang, Jie Xiong   +6 more
doaj   +1 more source

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

Advanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji, Zi'Ang Gao, Shiva Prasad Poudel, Rui‐Qi Cao, Tianzhe Chen, Luxin Li, Chong Liu, Salvador Barraza‐Lopez, Stuart S. P. Parkin, Kai Chang   +9 more
wiley   +1 more source

Halide perovskite memristors as flexible and reconfigurable physical unclonable functions

Nature Communications, 2021
Despite the impressive demonstrations with silicon and oxide memristors, realizing efficient roots of trust for resource-constrained hardware remains a challenge.
Rohit Abraham John, Nimesh Shah, Sujaya Kumar Vishwanath, Si En Ng, Benny Febriansyah, Metikoti Jagadeeswararao, Chip-Hong Chang, Arindam Basu, Nripan Mathews   +8 more
doaj   +1 more source

LiNbO3 dynamic memristors for reservoir computing

Frontiers in Neuroscience, 2023
Information in conventional digital computing platforms is encoded in the steady states of transistors and processed in a quasi-static way. Memristors are a class of emerging devices that naturally embody dynamics through their internal electrophyiscal ...
Yuanxi Zhao, Wenrui Duan, Chen Wang, Shanpeng Xiao, Yuan Li, Yizheng Li, Junwei An, Junwei An, Huanglong Li, Huanglong Li   +9 more
doaj   +1 more source

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

Advanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa, Masaki Tsuji, Yoshihiro Furue, Yifan Geng, Satya P. Pati, Satoshi Hamasuna, Takeaki Yajima   +6 more
wiley   +1 more source

Advancing Logic Circuits With Halide Perovskite Memristors for Next‐Generation Digital Systems

SmartMat
The potential of all‐inorganic halide perovskite‐based memristors as a solution to the limitations of traditional memory systems, particularly in the context of edge computing and next‐generation digital architectures, is investigated.
Mostafa Shooshtari, So‐Yeon Kim, Saeideh Pahlavan, Gonzalo Rivera‐Sierra, Manuel Jiménez Través, Teresa Serrano‐Gotarredona, Juan Bisquert, Bernabé Linares‐Barranco   +7 more
doaj   +1 more source

Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing

Advanced Functional Materials, EarlyView.
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann, Hanglin He, Marko Mladenović, Till Zellweger, Kevin Portner, Klemens Bauer, Guillaume Bellec, Mathieu Luisier, Alexandros Emboras   +8 more
wiley   +1 more source

Fractional memristor [PDF]

Applied Physics Letters, 2017
Based on the differential conformal transformation in the fractional order, we defined the fractional memristor in contrast to the traditional (integer-order) memristor. As an example, a typical spin-transfer torque (STT) memristor (with the asymmetric resistance hysteresis) was proved to be a 0.8 fractional memristor.
Frank Z. Wang, Luping Shi, Huaqiang Wu, Na Helian, Leon O. Chua   +4 more
openaire   +2 more sources