Results 51 to 60 of about 25,251 (300)

Emulating long-term synaptic dynamics with memristive devices [PDF]

, 2016
The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, unlike CMOS technology, the ...
Berdan, Radu, Khiat, Ali, Prodromakis, Themistoklis, Salaoru, Iulia, Vasilaki, Eleni, Wei, Shari Lim   +5 more
core   +2 more sources

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

90% yield production of polymer nano-memristor for in-memory computing

Nature Communications, 2021
Though polymer memristors are promising for low‐power flexible edge computing applications, realizing efficient nanometer‐scale arrays remains a challenge.
Bin Zhang, Weilin Chen, Jianmin Zeng, Fei Fan, Junwei Gu, Xinhui Chen, Lin Yan, Guangjun Xie, Shuzhi Liu, Qing Yan, Seung Jae Baik, Zhi-Guo Zhang, Weihua Chen, Jie Hou, Mohamed E. El-Khouly, Zhang Zhang, Gang Liu, Yu Chen   +17 more
doaj   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

Advanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon, Soeun Park, Yeong Kwon Kim, Juhwan Baek, Ki Han Kim, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang, Dong‐Ho Kang   +9 more
wiley   +1 more source

Memristor Crossbar-based Hardware Implementation of IDS Method

, 2010
Ink Drop Spread (IDS) is the engine of Active Learning Method (ALM), which is the methodology of soft computing. IDS, as a pattern-based processing unit, extracts useful information from a system subjected to modeling. In spite of its excellent potential
Bagheri-Shouraki, Saeed, Merrikh-Bayat, Farnood, Rohani, Ali   +2 more
core   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Advancing Logic Circuits With Halide Perovskite Memristors for Next‐Generation Digital Systems

SmartMat
The potential of all‐inorganic halide perovskite‐based memristors as a solution to the limitations of traditional memory systems, particularly in the context of edge computing and next‐generation digital architectures, is investigated.
Mostafa Shooshtari, So‐Yeon Kim, Saeideh Pahlavan, Gonzalo Rivera‐Sierra, Manuel Jiménez Través, Teresa Serrano‐Gotarredona, Juan Bisquert, Bernabé Linares‐Barranco   +7 more
doaj   +1 more source

LiNbO3 dynamic memristors for reservoir computing

Frontiers in Neuroscience, 2023
Information in conventional digital computing platforms is encoded in the steady states of transistors and processed in a quasi-static way. Memristors are a class of emerging devices that naturally embody dynamics through their internal electrophyiscal ...
Yuanxi Zhao, Wenrui Duan, Chen Wang, Shanpeng Xiao, Yuan Li, Yizheng Li, Junwei An, Junwei An, Huanglong Li, Huanglong Li   +9 more
doaj   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

Advanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak, Ryun‐Han Koo, Youngchan Cho, Changhyeon Han, Dongbin Kim, Soi Jeong, Yunho Shin, Joonhyeok Choi, Jiseong Im, Jonghyun Ko, Jong‐Ho Lee, Jangsaeng Kim, Youngho Kang, Wonjun Shin, Daewoong Kwon   +14 more
wiley   +1 more source