Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]
Materials (Basel), 2023 Maimon O, Li Q.
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Optoelectronic gain control of a microwave single stage GaAs MESFET amplifier [PDF]
Gain control of a single stage GaAs MESFET amplifier is demonstrated by the use of optical illumination of photon energy greater than the GaAs bandgap.
Simons, Rainee N.
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MMIC linear-phase and digital modulators for deep space spacecraft X-band transponder applications [PDF]
The design concepts, analyses, and development of GaAs monolithic microwave integrated circuit (MMIC) linear-phase and digital modulators for the next generation of space-borne communications systems are summarized.
Ali, Fazal, Mysoor, Narayan R.
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Optically controlled GaAs dual-gate MESFET and permeable base transistors [PDF]
Optically induced voltage and dc characteristics of the GaAs Dual-gate MESFET and the Permeable Base Transistor (PBT) with optical illumination at wavelength below 0.87 microns were obtained and compared with GaAs MESFET.
Bhasin, K. B., Simons, R. N.
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A 10-Watt X-Band Grid Oscillator [PDF]
, 1994 A 100-transistor MESFET grid oscillator has been fabricated that generates an effective radiated power of 660 W at 9.8 GHz and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3 W, or 103 mW per device.
De Lisio, Michael P. +6 more
core
Complementary silicon MESFET technology
Electronics Letters, 1987 Prototype complementary silicon MESFET inverters and rign oscillators were fabricated. N-channel transistors have platinum gates and erbium source and drain contacts, while for the p-channel devices the roles of the two metals are reversed. Silicon-on-sapphire substrates were used to provide good device isolation and realisation of normally-off ...
K.E. Bohlin +3 more
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Special Issue on Miniaturized Transistors, Volume II. [PDF]
Micromachines (Basel), 2022 Filipovic L, Grasser T.
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p-GaAs nanowire MESFETs with near-thermal limit gating
, 2018 Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics.
Caroff, P. +7 more
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Advanced digital modulation: Communication techniques and monolithic GaAs technology [PDF]
Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel
Kot, R. C. +3 more
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Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver [PDF]
A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system ...
Kot, R. A., Oliver, J. D., Wilson, S. G.
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