Results 111 to 120 of about 6,463 (213)
Guangtongxin yanjiu, 2008 文章介绍了一种在无法获取器件大信号模型的情况下采用小信号法设计宽带功率放大器的方法。基于微波砷化镓场效应管,采用小信号设计方法,利用ADS软件,依据宽带功率放大器的各项指标来同步进行电路的设计、优化和仿真,设计出了满足预期期望值的宽带功率放大器。
邢凌燕
doaj
Editorial for the Special Issue on SiC Based Miniaturized Devices. [PDF]
Micromachines (Basel), 2020 Saddow SE +4 more
europepmc +1 more source
Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS). [PDF]
Discov Nano, 2023 Ngo ST +5 more
europepmc +1 more source
On-Chip Detection of the Biomarkers for Neurodegenerative Diseases: Technologies and Prospects. [PDF]
Micromachines (Basel), 2020 Song C, Que S, Heimer L, Que L.
europepmc +1 more source
MESFET GaAs controlado fotónicamente
, 1998 The illumination characteristic of GaAs MESFET has been measured with single optical fiber is reported. This technique permits an optical control and observer the edge-effect in the MESFET planar. Application in high speed device is proposed.
Lomer Barboza, Mauro Matías|| +4 more
openaire +1 more source
A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications. [PDF]
Sensors (Basel), 2023 Pagnini L, Collodi G, Cidronali A.
europepmc +1 more source
Microwave characteristics of interdigitated photoconductors on a HEMT structure [PDF]
Interdigitated photoconductive detectors of various geometries were fabricated on AlGaAs/GaAs heterostructure material. The processes used in the fabrication of these devices are described, and the results of a study of their optical and electrical ...
Claspy, Paul C., Hill, Scott M.
core +1 more source
Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications. [PDF]
Micromachines (Basel), 2023 Zhang M +10 more
europepmc +1 more source