Results 121 to 130 of about 6,463 (213)

Microwave response of an HEMT photoconductor [PDF]

Interdigitated photodetectors of various geometries have been fabricated on GaAlAs/GaAs heterostructure material. Optical response characteristics of these devices have been examined at both dc and microwave frequencies.
Bhasin, K. B., Claspy, P. C.
core   +1 more source

A 30 GHz monolithic receive module technology assessment [PDF]

This report is a technology assessment relevant to the 30 GHz Monolithic Receive Module development. It is based on results obtained on the present NASA Contract (NAS3-23356) as well as on information gathered from literature and other industry sources ...
Bauhahn, P., Contolatis, T., Geddes, J., Sokolov, V.   +3 more
core   +1 more source

The design of a linear L-band high power amplifier for mobile communication satellites [PDF]

A linear L-band solid state high power amplifier designed for the space segment of the Mobile Satellite (MSAT) mobile communication system is described. The amplifier is capable of producing 35 watts of RF power with multitone signal at an efficiency of ...
Brassard, G., Goux, P., Li, E., Whittaker, N.   +3 more
core   +1 more source

Fault interruption scheme for HVDC systems using GaN-HEMT and VCB. [PDF]

J Power Electron
Raza A, Babar MZ, Shahid MU, Gulzar H, Gulzar Z, Rahman SU.   +5 more
europepmc   +1 more source

A Highly Sensitive and Miniature Optical Fiber Sensor for Electromagnetic Pulse Fields. [PDF]

Sensors (Basel), 2021
Zhao M, Zhou X, Chen Y.
europepmc   +1 more source

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics. [PDF]

Nanomaterials (Basel)
Hasan MM, Wang C, Pala N, Shur M.
europepmc   +1 more source

Diamond for Electronics: Materials, Processing and Devices. [PDF]

Materials (Basel), 2021
Araujo D, Suzuki M, Lloret F, Alba G, Villar P.   +4 more
europepmc   +1 more source

Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope. [PDF]

Sci Adv, 2021
Wang J, Cai L, Chen J, Guo X, Liu Y, Ma Z, Xie Z, Huang H, Chan M, Zhu Y, Liao L, Shao Q, Chai Y.   +12 more
europepmc   +1 more source

Mixed Dimensional ZnO/WSe₂ Piezo-gated Transistor with Active Millinewton Force Sensing. [PDF]

ACS Appl Mater Interfaces, 2022
Geng Y, Xu J, Bin Che Mahzan MA, Lomax P, Saleem MM, Mastropaolo E, Cheung R.   +6 more
europepmc   +1 more source

Breaking the p-type doping barrier in β-Ga₂O₃: a GaN-based heterojunction bipolar transistor with high gain, high breakdown, and RF capability. [PDF]

RSC Adv
Than PH, Than TQ, Takaki Y.
europepmc   +1 more source