Results 161 to 170 of about 6,463 (213)
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Polycrystalline diamond UV-triggered MESFET receivers
Nanotechnology, 2012Optically triggered UV sensitive receivers were fabricated on polycrystalline diamond as surface channel MESFETs. Opaque gates with asymmetric structure were designed in order to improve charge photogeneration mainly within the gate-drain region. Photogenerated holes contributed to the channel charge by assistance of the local electric field, in such a
G Conte +6 more
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A 35 GHz monolithic MESFET LNA
IEEE 1988 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers., 2003The design and fabrication of a state-of-the-art 35-GHz monolithic low-noise amplifier (LNA) is briefly described. The amplifier, with 6.5-dB gain, 4-dB noise figure, and 10-dBm power output at 1-dB gain compression, is based on a 0.25- mu m*200- mu m molecular-beam epitaxy (MBE)-grown MESFET.
S. Bandla +6 more
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IEEE Transactions on Microwave Theory and Techniques, 1984
A theoretical and experimental investigation of dual-gate MESFET mixers is presented. Based on a detailed analysis of the different nonlinear modes of DGFET's, a computer-aided modeling procedure has been developed, which allowed to recognize and optimize critical circuit and bias conditions for high conversion gain and IF bandwidth.
C. Tsironis, R. Meierer, R. Stahlmann
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A theoretical and experimental investigation of dual-gate MESFET mixers is presented. Based on a detailed analysis of the different nonlinear modes of DGFET's, a computer-aided modeling procedure has been developed, which allowed to recognize and optimize critical circuit and bias conditions for high conversion gain and IF bandwidth.
C. Tsironis, R. Meierer, R. Stahlmann
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1978 International Electron Devices Meeting, 1978
Al gate self aligned schottky barrier field effect transistors having gate dimensions of 1.5µ × 300µ and a channel length of 3µ were fabricated in epitaxial layers grown by organometallic chemical vapor deposition. The layers with a net carrier concentration of 1.4 × 1017cm-3were grown at 730°C. The devices exhibited a maximun dc transconductance (g m )
H. Morkoc, J.T. Andrews, V. Abei
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Al gate self aligned schottky barrier field effect transistors having gate dimensions of 1.5µ × 300µ and a channel length of 3µ were fabricated in epitaxial layers grown by organometallic chemical vapor deposition. The layers with a net carrier concentration of 1.4 × 1017cm-3were grown at 730°C. The devices exhibited a maximun dc transconductance (g m )
H. Morkoc, J.T. Andrews, V. Abei
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Subthreshold MESFET empirical model
Solid-State Electronics, 1997Abstract An empirical modification of the large-signal GaAs MESFET TOM model is presented. The modified model gives an accurate prediction of the I–V characteristics below and above pinch-off and extends the application of the model to the subthreshold region.
Weihong Zhang, C Andre, T Salama
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IEEE Transactions on Electron Devices, 1978
Performance of GaAs dual-gate MESFET, including high-frequency noise behavior, was analyzed on the basis of Statz's model. Under the design considerations developed from the analysis, fabrication and characterization of a prototype device were carried out. The present analysis was confirmed to reproduce satisfactorily the performance observed.
T. Furutsuka, M. Ogawa, N. Kawamura
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Performance of GaAs dual-gate MESFET, including high-frequency noise behavior, was analyzed on the basis of Statz's model. Under the design considerations developed from the analysis, fabrication and characterization of a prototype device were carried out. The present analysis was confirmed to reproduce satisfactorily the performance observed.
T. Furutsuka, M. Ogawa, N. Kawamura
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2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843), 2004
MESFET based switching devices have considerable initial losses and smaller valid switched microwave frequency power compared with p-i-n based circuits. MESFET switches possess lower current drainage and technological possibility of integration into the chip.
A.A. Barov, M.G. Ignatjev
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MESFET based switching devices have considerable initial losses and smaller valid switched microwave frequency power compared with p-i-n based circuits. MESFET switches possess lower current drainage and technological possibility of integration into the chip.
A.A. Barov, M.G. Ignatjev
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MRS Proceedings, 2006
AbstractThe development of high power, high efficiency silicon carbide RF MESFETs is reported. High power densities of over 3W/mm have been measured for devices with total power output in excess of 25W. The devices have been fabricated using a novel lateral epitaxy technique.
Christopher Harris +4 more
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AbstractThe development of high power, high efficiency silicon carbide RF MESFETs is reported. High power densities of over 3W/mm have been measured for devices with total power output in excess of 25W. The devices have been fabricated using a novel lateral epitaxy technique.
Christopher Harris +4 more
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GaAs MESFET interface considerations
IEEE Transactions on Electron Devices, 1987Various properties of GaAs MESFET's are discussed in terms of the basic physics of interfaces and deep levels. Fermi-level pinning is shown to lead to hole injection from a positively biased metal lying in direct contact with semi-insulating GaAs. This hole injection is partially responsible for low-frequency oscillations in GaAs MESFET's.
J.F. Wager, A.J. McCamant
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Encapsulated GaAs power MESFET
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 2002Utilizing a combination of low-temperature-grown Al/sub 0.3/Ga/sub 0.7/As passivation, overlapping gate, MOCVD regrowth of the source/drain contacts, and isolation by boron ion implantation, we have fabricated a GaAs MESFET with a completely encapsulated channel.
N.X. Nguyen +4 more
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