Results 241 to 250 of about 50,856 (266)

GaAs Microarrays by Noble-Metal Assisted Chemical Etching

ECS Transactions, 2008
Microarrays of n-GaAs were fabricated for both (100) and (111) by colloidal crystal templating, ion sputtering and chemical etching using nanosized Au particles as the etching catalyst. Since self-organized polystyrene spheres were used as a mask, Au particles were selectively deposited at sites resulting in the formation of Au honeycomb pattern on ...
Yukiko Yasukawa, Hidetaka Asoh, Sachiko Ono   +2 more
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Metal‐Assisted Chemical Etching of Silicon: A Review

Advanced Materials, 2010
AbstractThis article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal‐assisted chemical etching. First, the basic process and mechanism of metal‐assisted chemical etching is introduced.
Zhipeng Huang, Nadine Geyer, Peter Werner, Johannes de Boor, Ulrich Gösele   +4 more
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Vapor Phase Metal‐Assisted Chemical Etching of Silicon

Advanced Functional Materials, 2014
This work introduces and explores vapor phase metal‐assisted chemical etching (VP‐MaCE) of silicon as a method to bypass some of the challenges found in traditional liquid phase metal‐assisted chemical etching (LP‐MaCE). Average etch rates for Ag, Au, and Pd/Au catalysts are established at 31, 70, and 96 nm/min respectively, and the relationship ...
Owen J. Hildreth, Daniel R. Schmidt
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ChemInform Abstract: Metal‐Assisted Chemical Etching of Silicon

ChemInform, 2011
AbstractReview: 121 refs.
Zhipeng Huang, Nadine Geyer, Peter Werner, Johannes de Boor, Ulrich Goesele   +4 more
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(Invited) Light Enhanced Metal Assisted Chemical Etching of Silicon

ECS Meeting Abstracts, 2018
The study of electrochemicl porosification of silicon has allowed the production of different kinds of porosities in it, ranging from micropores to macropores, and directed by cristallographic planes, or electrical current lines. Additional studies have been on the use of different kinds of electrolytes, to etch faster, or with lower branching. Pore
Enrique Quiroga-González, Miguel Ángel Juárez-Estrada, Estela Gómez-Barojas   +2 more
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Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Advanced Materials, 2021
AbstractStructuring Si, ranging from nanoscale to macroscale feature dimensions, is essential for many applications. Metal‐assisted chemical etching (MaCE) has been developed as a simple, low‐cost, and scalable method to produce structures across widely different dimensions.
Ravi P. Srivastava, Dahl‐Young Khang
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Mechanism of nanowire formation in metal assisted chemical etching

Electrochimica Acta, 2013
Abstract A simple, effective, and universal model is presented for the formation of silicon nanowires during silver metal assisted chemical etching of silicon. The model explains nanowire formation in terms of well-known and well-understood principles of electrochemical exchange current densities at silver metal/solution interfaces, silicon/silver ...
Zachary R. Smith, Rosemary L. Smith, Scott D. Collins   +2 more
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On the Metal-Assisted Chemical Etching of Nanoporous Silicon

ECS Meeting Abstracts, 2012
Abstract not Available.
Dmitrii Goryachev, Ludvig Belyakov, Olga Yeltsina, Julia Vainshtein, Olga M. Sreseli   +4 more
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High aspect silicon structures using metal assisted chemical etching

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 2016
This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology.
N.V. Toan, M. Toda, T. Ono
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Metal-assisted chemical etching of silicon in HF–H2O2

Electrochimica Acta, 2008
Metal-assisted etching of silicon in HF/H2O2/H2O solutions with Ag nanoparticles as catalyst agents was investigated. SEM observations and etch rate measurements were carried out as a function of the etching solution composition. Depending on the relative amount of HF and H2O2, different regimes of dissolution take place and a strong similarity with ...
C. Chartier, S. Bastide, C. Lévy-Clément   +2 more
openaire   +1 more source