Results 101 to 110 of about 2,648,294 (305)
Pressure‐Assisted Dimensional Transformation of 2D Hydrogenated Borophene into 0D Boron Quantum Dots
Hydrogenated borophene (HB) is transformed into distinct boron nanostructures through a solvent‐free thermal process. Under flowing nitrogen, hydrogen escape promotes reconstruction into B2O3 nanoplatelets, whereas hydrogen‐induced pressure under sealed conditions facilitates fragmentation into boron quantum dots.
Ozden Gunes Yildiz +11 more
wiley +1 more source
The need for low-power low-voltage circuit so lutions increases significantly with the rapid spread of wireless sensor network (WSN) and energy harvesting applications.
Al-Shebanee Durgham
doaj +1 more source
Towards a Chemiresistive Sensor-Integrated Electronic Nose: A Review
Electronic noses have potential applications in daily life, but are restricted by their bulky size and high price. This review focuses on the use of chemiresistive gas sensors, metal-oxide semiconductor gas sensors and conductive polymer gas sensors in ...
Kea-Tiong Tang, Shih-Wen Chiu
doaj +1 more source
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll +17 more
wiley +1 more source
Research progress of semiconductor gas sensors for screening of early lung cancer
The significance of early screening, diagnosis, and treatment for lung cancer, a disease with high incidence and mortality rates, is increasingly acknowledged. In comparison to traditional invasive examination methods, breath analysis technology based on
Kaidi WU, Zhijie XU
doaj +1 more source
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam +18 more
wiley +1 more source
Investigation of InAlP Native Oxides for GaAs Metal-Oxide-Semiconductor Device Applications
The wet thermal oxides of InAlP have been carefully studied to explore the potential of such films for use as a gate dielectric in GaAs metal-oxide-semiconductor (MOS) device applications.
Ying Cao (170160)
core +1 more source
Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions
We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface.
Rotem Har-Lavan +5 more
doaj +1 more source
Physics‐Grounded Materials Artificial Intelligence for Reliable Materials Discovery
Physics‐Grounded Materials AI (PhysMat AI) integrates physical priors, descriptors, constraints, verification, and data infrastructure into a unified full‐stack framework, enabling reliable, interpretable, and autonomous AI‐driven materials discovery.
Yuhang Wang +3 more
wiley +1 more source
Advanced ink systems for solution‐processed textile triboelectric nanogenerators are systematically summarized, spanning conductive, tribo‐negative, and tribo‐positive layers. By connecting ink chemistry, deposition methods, and device function, the present review reveals the key governing principles of solution development and highlights practical ...
Xinlong Sun, Stephen Beeby
wiley +1 more source

