Results 81 to 90 of about 2,648,294 (305)

Matrix-dependent Strain Distributions of Au and Ag Nanoparticles in a Metal-oxide-semiconductor-based Nonvolatile Memory Device [PDF]

, 2015
The matrix-dependent strain distributions of Au and Ag nanoparticles in a metal-oxide-semiconductor based nonvolatile memory device are investigated by finite element calculations. The simulation results clearly indicate that both Au and Ag nanoparticles
Wei, Wenyan, Huang, Honghua, Ying Zhang, Zhang, Ying, Yuan, Cailei, Cailei Yuan, Luo, Xingfang, Ting Yu, Honghua Huang, Wenyan Wei, Xingfang Luo, Yu, Ting   +11 more
core   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Fabrication and characterisation of novel Ge MOSFETs [PDF]

As high-k dielectrics are introduced into commercial Si CMOS (Complimentary Metal Oxide Semiconductor) microelectronics, the 40 year channel/dielectric partnership of Si/SiO2 is ended and the door opened for silicon to be replaced as the active channel ...
Beer, Chris
core  

Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

Active and Passive Electronic Components, 2012
In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics.
J. H. Yum, J. Oh, Todd. W. Hudnall, C. W. Bielawski, G. Bersuker, S. K. Banerjee   +5 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

Advanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko, Jungi Song, Minsu Kim, Yongwook Seok, Seongje Moon, Kenji Watanabe, Takashi Taniguchi, Kayoung Lee   +7 more
wiley   +1 more source

Produção de semicondutores de óxido de cobre tipo - N eletrodepositados [PDF]

, 2013
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico, Programa de Pós-Graduação em Ciência e Engenharia de Materiais, Florianópolis, 2010Neste trabalho foram produzidos filmes finos do semicondutor óxido cuproso (Cu2O ...
Pelegrini, Silvia
core  

Semiconductor Wastewater Treatment With Natural Starches As Coagulants Using Response Surface Methodology [TD746. F252 2007 f rb]. [PDF]

, 2007
Air sisa semikonduktor yang digunakan dalam kajian ini diambil dari sebuah syarikat semikonduktor antarabangsa di Pulau Pinang. The semiconductor wastewater used in this study was obtained from a multinational semiconductor company located in ...
Mohd Omar, Fatehah
core   +1 more source

The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device

, 2005
We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode.
Chong, Lit Ho, Mallik, Kanad, de Groot, C. H.   +2 more
core   +1 more source