Results 91 to 100 of about 2,648,294 (305)

Editorial for the Special Issue on Miniaturized Transistors

Micromachines, 2019
Complementary Metal Oxide Semiconductor (CMOS) devices and fabrication techniques have enabled tremendous technological advancements in a short period of time [...]
Lado Filipovic, Tibor Grasser
doaj   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source

3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance

Kongzhi Yu Xinxi Jishu, 2017
It developed a new enhanced trench metal oxide semiconductor (TMOS+) 3 300 V IGBT with soft punch through (SPT) concept and n-well layer. Its on-state voltage (Tj=150 ℃ ) is 25% lower than that of 3 300 V planar enhanced double diffused metal oxide ...
ZHOU Feiyu, NING Xubin, Luther Ngwendson, XIAO Qiang, Ian Deviny, DAI Xiaoping   +5 more
doaj  

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Topologically Controlled Growth of Magnetic-Metal-Functionalized Semiconductor Oxide Nanorods

, 2007
Colloidal semiconductor-magnetic hybrid nanocrystals with topologically controlled composition are fabricated by heterogeneous nucleation of spherical ε-Co domains onto anatase TiO2 nanorods.
Vincenzo Grillo (1587214), Marianna Casavola (1322343), Enrique Fernandez Pinel (8660622), Fabia Gozzo (2026561), Cinzia Giannini (674969), Roberto Cingolani (189795), Liberato Manna (1285230), Miguel Angel Garcia (2316874), Pantaleo Davide Cozzoli (2166481), Elvio Carlino (253148)   +9 more
core   +1 more source

Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs [PDF]

, 2007
The performance of 300nm, 500nm and 1μm metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-κ (κ=20) dielectric stack grown upon a δ-doped AlGaAs/InGaAs/AlGaAs ...
Moran, D.A.J., D. A. J. Moran, H. Zhou, I. G. Thayne, M. Passlack, K. Rajagopalan, Passlack, M., X. Li, Li, X., Thayne, I.G., Droopad, R., McIntyre, D., Zhou, H., J. Abrokwah, D. McIntyre, Abrokwah, J., P. Zurcher, S. Thoms, R. Droopad, Zurcher, P., R. J. W. Hill, Thoms, S., Rajagopalan, K., Hill, R.J.W.   +23 more
core   +1 more source

An overview of the synthesis of CuO-ZnO nanocomposite for environmental and other applications

Nanotechnology Reviews, 2018
In the field of environmental science, metal oxide nanocomposites have gained a great attention for both theoretical and experimental aspects of their upgradation because of their wide range of practical applications such as catalysts, sensors, hydrogen ...
Das Susmita, Srivastava Vimal Chandra
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

High‐Speed Photoresponse of CVD‐Grown Lateral TMD Heterostructures

Advanced Functional Materials, EarlyView.
Internal electric fields generated by p‐n junctions and asymmetric Schottky barriers enhance the photoresponse speed in CVD‐grown monolayer TMD lateral heterostructures. This results in a 1.5‐2 orders of magnitude reduction in rise and fall times for optimized device configurations compared to homogeneous single‐material devices, enabling bandwidths ...
Mario Martin, Axel Printschler, William Roberts, Jonas L. Hiller, Patrick Michel, Martin Eberle, Marco Hammer, Md Tarik Hossain, Andrey Turchanin, Marcus Scheele   +9 more
wiley   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source