Results 71 to 80 of about 2,648,294 (305)

CARATTERIZZAZIONE ELETTRICA E SPETTROSCOPICA AD IMPEDENZA DI OSSIDI METALLICI NANOSTRUTTURATI PER IL RILEVAMENTO DI ALCANI VOLATILI [PDF]

, 2009
Chemoresistive gas sensors using semiconductor metal-oxides have proven to be excellent in important characteristics such as sensitivity, long-term stability, robustness and price. Solid solutions of mixed Sn and Ti oxides have shown promising results in
Cervi, Alan
core  

Tunable Coupling and Isolation of Single Electrons in Silicon Metal-Oxide-Semiconductor Quantum Dots

, 2019
Extremely long coherence times, excellent single-qubit gate fidelities, and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this,
W. I. L. Lawrie, L. Petit (5186171), J. S. Clarke (7909061), L. M. K. Vandersypen (7909064), H. G. J. Eenink (7909055), L. M. K. Vandersypen, W. I. L. Lawrie (7909058), L. Petit, H. G. J. Eenink, M. Veldhorst (7909067), M. Veldhorst, J. S. Clarke   +11 more
core   +1 more source

Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure [PDF]

, 2003
Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits.
Ibrahim, K., Aw, K.C.
core   +1 more source

Analysis of charge-trapping effects in ultra-low current metal–oxide–semiconductor–oxide–semiconductor devices

AIP Advances
In this paper, we present the study of charge-trapping effects in ultra-low current metal–oxide–semiconductor–oxide–semiconductor structures. We fabricated the Al/SiOx/a-Si/SiOx/n++ Si devices using low-temperature processes with various oxide ...
Piotr Wiśniewski, Piotr Jeżak, Michał Jarosik   +2 more
doaj   +1 more source

Remaining useful life prognostic of power metal oxide semiconductor field effect transistor based on improved particle filter algorithm

Advances in Mechanical Engineering, 2017
The power metal oxide semiconductor field effect transistor is used extensively in analog circuits and digital circuits. However, it is also the highest failure rate component in the power electronics system.
Lifeng Wu, Jing Yang, Zhen Peng, Hongmin Wang   +3 more
doaj   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Design and synthesis of metal oxide–polymer composites

, 2022
Recently, metal oxide-polymer composites have received significant attention in many industrial fields. The combination of metal oxides (commonly used TiO2, ZnO, Fe3O4, and Al2O3) with a polymer matrix governs to produce high-performance metal oxide ...
Deveci, Hüseyin, Huseyin Deveci, Kaya Güzel, Gülcihan, Gulcihan Guzel Kaya   +3 more
core   +1 more source

Nanoscale Spatial Tuning of Superconductivity in Cuprate Thin Films via Direct Laser Writing

Advanced Functional Materials, EarlyView.
Maskless direct laser writing enables local control of oxygen stoichiometry in epitaxial YBCO thin films under ambient conditions. Sub‐micrometer grayscale patterns with tunable optical response and superconducting transport properties are achieved.
Irene Biancardi, Valerio Levati, Jordi Alcalà, Thomas Günkel, Nicolas Lejeune, Riccardo Girelli, Alejandro V. Silhanek, Valeria Russo, Narcís Mestres, Daniela Petti, Anna Palau, Edoardo Albisetti   +11 more
wiley   +1 more source

Low-Frequency Noise Modeling of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

, 2022
4H-silicon carbide metal-oxide-semiconductor field-effect transistors (4H-SiC MOSFETs) show 1/f low-frequency noise behavior. In this paper, this can be explained by the combination of the mobility fluctuation (Δμ) and the carrier number ...
Wanling Deng, Yuan Liu, Xiaoming Xiong, Weijie Ye   +3 more
core   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source