Results 51 to 60 of about 2,648,294 (305)

Local mapping of interface traps using contactless capacitance transient technique

AIP Advances, 2016
Contactless capacitance transient techniques have been applied to local mapping of interface traps of a semiconductor wafer. In contactless capacitance transient techniques, a Metal-Air gap-Oxide-Semiconductor (MAOS) structure is used instead of a ...
Haruhiko Yoshida, Hidenobu Mori
doaj   +1 more source

Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing

Micromachines, 2021
We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (
Hoontaek Lee, Junsoo Kim, Kumjae Shin, Wonkyu Moon   +3 more
doaj   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Metal oxide semiconductor-based methane sensing

Carbon Future
Real-time and sensitive detection of methane (CH4) is vital to the safety of life and production due to the explosivity and greenhouse effect of methane.
Renjie Chen, Shuyu Lin, Zhongtian Wang, Yi Xia, Lan Xiang   +4 more
doaj   +1 more source

A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor

Micromachines, 2020
In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found.
Yu-Yang Tsai, Chun-Yu Kuo, Bo-Chang Li, Po-Wen Chiu, Klaus Y. J. Hsu   +4 more
doaj   +1 more source

Ferroelectric field effect transistors: Progress and perspective

APL Materials, 2021
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation devices as they can serve as a synaptic device for neuromorphic implementation and a one-transistor (1T) for achieving high integration.
Jae Young Kim, Min-Ju Choi, Ho Won Jang
doaj   +1 more source

Injection photodiods based on metal oxide semiconductors

Moldavian Journal of the Physical Sciences, 2020
A brief review of our recent research on injection photodiodes based on metal oxide semiconductors deposited onto Si substrates is presented. A series of ZnSnO, NiO, and Zn1-xMgxO thin films are prepared by aerosol spray pyrolysis deposition or sol–gel spin coating on Si substrates with a post-deposition thermal treatment in air at a temperature of ...
Morari, Vadim, Ursaki, Veaceslav, Rusu, Emil, Tiginyanu, Ion   +3 more
openaire   +3 more sources

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Memristor-Based Nonvolatile Random Access Memory: Hybrid Architecture for Low Power Compact Memory Design

IEEE Access, 2013
In this paper, a new approach toward the design of a memristor based nonvolatile static random-access memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor
Syed Shakib Sarwar, Syed An Nazmus Saqueb, Farhan Quaiyum, A. B. M. Harun-Ur Rashid   +3 more
doaj   +1 more source

Impact of fluorine doping on solution-processed In–Ga–Zn–O thin-film transistors using an efficient aqueous route

AIP Advances, 2020
Simple and facile solution-processed thin-film transistors (TFTs) using metal-oxide semiconductors are promising for producing large-area electronics.
Masashi Miyakawa, Mitsuru Nakata, Hiroshi Tsuji, Hiroaki Iino, Yoshihide Fujisaki   +4 more
doaj   +1 more source