Results 31 to 40 of about 2,648,294 (305)

Entropy‐Driven Design of Low‐Melting‐Point Alloys via Compositionally Complex Strategy

Advanced Engineering Materials, EarlyView.
Conventional low‐melting‐point alloys (LMPAs) are limited by a narrow compositional space and inherent property trade‐offs. This review presents an entropy‐driven design strategy that overcomes these limitations, ushering in a new class of low‐melting‐point compositionally complex alloys (LMCCAs).
Yinghui Shang, Jianxiang Zhao, Zhaoqi Chen, Hao Gong, Yinsen Yan, Junlei Tao, Yong Yang   +6 more
wiley   +1 more source

High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor [PDF]

Журнал нано- та електронної фізики, 2011
In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices.
N.P. Maity, A. Pandey, S. Chakraborty, M. Roy   +3 more
doaj  

A General Route for Growing Metal Sulfides onto Graphene Oxide and Exfoliated Graphite Oxide

Nanomaterials, 2017
Graphene-based materials are elective materials for a number of technologies due to their unique properties. Also, semiconductor nanocrystals have been extensively explored due to their size-dependent properties that make them useful for several ...
Joana L. Lopes, Ana C. Estrada, Sara Fateixa, Marta Ferro, Tito Trindade   +4 more
doaj   +1 more source

Gallium Microalloying in Bi–Sn Solders: Interfacial Phase Formation, Wettability, and Long‐Term Shear Reliability Under Isothermal Aging

Advanced Engineering Materials, EarlyView.
Gallium microalloying redirects interfacial reactions in low‐temperature Bi–Sn solders from Cu–Sn toward Cu–Ga intermetallic formation. The resulting Cu–Ga layer suppresses intermetallic growth during thermal aging, alters fracture pathways, and improves interfacial stability.
Iva Králová, Markéta Klimtová, Mohd Faizul Mohd Sabri, Yew Hoong Wong, Petr Veselý, Martin Plaček, Karel Dušek   +6 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Synthesis of a nano-silver metal ink for use in thick conductive film fabrication applied on a semiconductor package. [PDF]

PLoS ONE, 2014
The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency ...
Lai Chin Yung, Cheong Choke Fei, Js Mandeep, Huda Binti Abdullah, Lai Khin Wee   +4 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Surface Recombination Via Interface Defects in Field Effect Transistors

Active and Passive Electronic Components, 1998
Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependent on the energy level and on the operating conditions.
E. Bendada, K. Raïs, P. Mialhe, J. P. Charles   +3 more
doaj   +1 more source

Ohmic-to-Schottky Modification of Zno-Metal Contact Modulated by Film Thickness [PDF]

Materials Research
This work investigated the charge transport behavior at the interface between a Pt-Ir metal contact and transparent zinc oxide (ZnO) electrodes with one, four, and eight ZnO layers.
Raquele Lima Moreira, Luis Paulo Mourão dos Santos, Francisco Carlos Carneiro Soares Salomão, Eduardo B. Barros, Igor Frota Vasconcelos   +4 more
doaj   +1 more source

The advancement of silicon-on-insulator (SOI) devices and their basic properties

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020
Silicon-on-insulator (SOI) is most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in fabrication of many integrated circuits (ICs), and in particular, complementary metal ...
T.E. Rudenko, A.N. Nazarov, V.S. Lysenko
doaj   +1 more source