Results 31 to 40 of about 3,721 (215)

Design of Fractional-Order Lead Compensator for a Car Suspension System Based on Curve-Fitting Approximation

open access: yesFractal and Fractional, 2021
An alternative procedure for the implementation of fractional-order compensators is presented in this work. The employment of a curve-fitting-based approximation technique for the approximation of the compensator transfer function offers improved ...
Evisa Memlikai   +6 more
doaj   +1 more source

Resistance Rapid Heating of Aluminum Coatings in an Extreme High Vacuum–Adequate Atmosphere for Hot Stamping

open access: yesAdvanced Engineering Materials, EarlyView.
The subject of this work is the development of a corrosion‐protective coating on steel sheets for form hardening. Rapid heating in an extreme high vacuum (XHV)‐adequate atmosphere is a useful method to prevent oxidation during alloying of 22MnB5 and aluminum to obtain a metallurgical bonding.
Lorenz Albracht   +5 more
wiley   +1 more source

Soft Mechanical‐Electrical Logic Using Liquid Metal‐Filled 3D‐Printed Architectures

open access: yesAdvanced Engineering Materials, EarlyView.
We present 3D‐printed soft mechanical–electrical logic elements that use liquid metal–filled silicone tubes actuated by thermoplastic polyurethane/polylactic acid (TPU/PLA) architectures to produce Boolean operations. Complementary normally open and normally closed unit cells perform repeatable binary transitions and can be combined into more complex ...
Christoph Lehmann   +2 more
wiley   +1 more source

Surface Recombination Via Interface Defects in Field Effect Transistors

open access: yesActive and Passive Electronic Components, 1998
Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependent on the energy level and on the operating conditions.
E. Bendada   +3 more
doaj   +1 more source

Ohmic-to-Schottky Modification of Zno-Metal Contact Modulated by Film Thickness [PDF]

open access: yesMaterials Research
This work investigated the charge transport behavior at the interface between a Pt-Ir metal contact and transparent zinc oxide (ZnO) electrodes with one, four, and eight ZnO layers.
Raquele Lima Moreira   +4 more
doaj   +1 more source

The advancement of silicon-on-insulator (SOI) devices and their basic properties

open access: yesSemiconductor Physics, Quantum Electronics & Optoelectronics, 2020
Silicon-on-insulator (SOI) is most promising present-day silicon technology. The use of SOI provides significant benefits over traditional bulk silicon technology in fabrication of many integrated circuits (ICs), and in particular, complementary metal ...
T.E. Rudenko, A.N. Nazarov, V.S. Lysenko
doaj   +1 more source

Cathodic Cage Plasma Deposition of Nanostructured Cu–Fe–Se Coatings on Poly(methyl Methacrylate)

open access: yesAdvanced Engineering Materials, EarlyView.
Nanostructured Cu–Fe–Se coatings are deposited on PMMA by a modified cathodic cage plasma process, enabling low‐temperature deposition on polymer substrates. A transition from discontinuous to compact morphology is observed with temperature, with optimal properties at 200°C, where improved CuFeSe2‐type bonding, lowest sheet resistance, and favorable ...
V. S. S. Sobrinho   +8 more
wiley   +1 more source

Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

open access: yesNature Communications, 2016
Wide-bandgap, metal-oxide thin-film transistors are limited in their application by the lack of available p-type material. Here, the authors demonstrate a wide-bandgap metal-oxide n-type semiconductor that sustains a strong p-type inversion layer using a
Gem Shoute   +4 more
doaj   +1 more source

Encyclopedia of 2D β′‐In2Se3 Growth Using Chemical Vapor Deposition: The Effects of Synthesis Parameters Onto Material Quality

open access: yesAdvanced Engineering Materials, EarlyView.
A distinct semi‐confined inner‐tube chemical vapor deposition geometry enables reproducible, large‐area growth of phase‐pure 2D β′‐In2Se3 from InI + Se precursors. Engineering local vapor transport and optimizing precursor delivery and temperature–time conditions yield uniform continuous films.
Dasun P. W. Guruge   +8 more
wiley   +1 more source

A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor

open access: yesMicromachines, 2020
In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found.
Yu-Yang Tsai   +4 more
doaj   +1 more source

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