Results 11 to 20 of about 3,721 (215)
Comparison of Strain Effect between Aluminum and Palladium Gated MOS Quantum Dot Systems
As nano-scale metal-oxide-semiconductor devices are cooled to temperatures below 1 K, detrimental effects due to unintentional dots become apparent. The reproducibility of the location of these unintentional dots suggests that there are other mechanisms ...
Brian Chi Ho Mooy +2 more
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The thermoelectric generator (TEG) stands out among many energy harvesters due to its simple structure, small size, rich thermal energy, and the absence of pollution and noise.
Jie Miao +5 more
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Self‐Assembly of Semiconductor Metal Oxide Nanostructures [PDF]
1 Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education and College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025, China 2 School of Physics and Technology, University of Jinan, Shandong, Jinan 250022, China 3 School of Materials Science and Engineering, Nanjing University of Science and ...
Xiang Wu +3 more
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Recent Progress on Semiconductor-Interface Facing Clinical Biosensing
Semiconductor (SC)-based field-effect transistors (FETs) have been demonstrated as amazing enhancer gadgets due to their delicate interface towards surface adsorption. This leads to their application as sensors and biosensors.
Mingrui Zhang, Mitchell Adkins, Zhe Wang
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Strategic Review of Arsenide, Phosphide and Nitride MOSFETs [PDF]
Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2.
Gourab Dutta +3 more
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Injection photodiods based on metal oxide semiconductors
A brief review of our recent research on injection photodiodes based on metal oxide semiconductors deposited onto Si substrates is presented. A series of ZnSnO, NiO, and Zn1-xMgxO thin films are prepared by aerosol spray pyrolysis deposition or sol–gel spin coating on Si substrates with a post-deposition thermal treatment in air at a temperature of ...
Morari, Vadim +3 more
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Metal oxide semiconductors for gas sensing
AbstractThe usage of the gas sensor has been increasing very rapidly in the industry and in daily life for various potential applications. In the recent years, metal oxide semiconductors (MOS) become the primary choice for designing highly sensitive, stable, and low‐cost real‐life applications‐based gas sensors due to their inherent physical and ...
Neeraj Goel +3 more
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Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures
The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In
John Chelliah Cyril R.A. +1 more
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Focused Review on Print‐Patterned Contact Electrodes for Metal‐Oxide Thin‐Film Transistors
Metal‐oxide‐semiconductor‐based thin‐film transistors (TFTs) are exploited in display backplanes and X‐ray detectors fabricated by vacuum deposition and lithographic patterning.
Fei Liu +3 more
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Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches
Present work is devoted to the development of a mathematical model for the forward current-voltage characteristic of Schottky diodes with a metal – oxide – semiconductor (MOS) trench structure, which takes into account the accumulation of the main ...
J. A. Solovjov
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