Results 11 to 20 of about 3,721 (215)

Comparison of Strain Effect between Aluminum and Palladium Gated MOS Quantum Dot Systems

open access: yesUniverse, 2020
As nano-scale metal-oxide-semiconductor devices are cooled to temperatures below 1 K, detrimental effects due to unintentional dots become apparent. The reproducibility of the location of these unintentional dots suggests that there are other mechanisms ...
Brian Chi Ho Mooy   +2 more
doaj   +1 more source

MPPT Circuit Using Time Exponential Rate Perturbation and Observation for Enhanced Tracking Efficiency for a Wide Resistance Range of Thermoelectric Generator

open access: yesApplied Sciences, 2021
The thermoelectric generator (TEG) stands out among many energy harvesters due to its simple structure, small size, rich thermal energy, and the absence of pollution and noise.
Jie Miao   +5 more
doaj   +1 more source

Self‐Assembly of Semiconductor Metal Oxide Nanostructures [PDF]

open access: yesJournal of Nanomaterials, 2013
1 Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education and College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025, China 2 School of Physics and Technology, University of Jinan, Shandong, Jinan 250022, China 3 School of Materials Science and Engineering, Nanjing University of Science and ...
Xiang Wu   +3 more
openaire   +1 more source

Recent Progress on Semiconductor-Interface Facing Clinical Biosensing

open access: yesSensors, 2021
Semiconductor (SC)-based field-effect transistors (FETs) have been demonstrated as amazing enhancer gadgets due to their delicate interface towards surface adsorption. This leads to their application as sensors and biosensors.
Mingrui Zhang, Mitchell Adkins, Zhe Wang
doaj   +1 more source

Strategic Review of Arsenide, Phosphide and Nitride MOSFETs [PDF]

open access: yesЖурнал нано- та електронної фізики, 2011
Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2.
Gourab Dutta   +3 more
doaj  

Injection photodiods based on metal oxide semiconductors

open access: yesMoldavian Journal of the Physical Sciences, 2020
A brief review of our recent research on injection photodiodes based on metal oxide semiconductors deposited onto Si substrates is presented. A series of ZnSnO, NiO, and Zn1-xMgxO thin films are prepared by aerosol spray pyrolysis deposition or sol–gel spin coating on Si substrates with a post-deposition thermal treatment in air at a temperature of ...
Morari, Vadim   +3 more
openaire   +3 more sources

Metal oxide semiconductors for gas sensing

open access: yesEngineering Reports, 2022
AbstractThe usage of the gas sensor has been increasing very rapidly in the industry and in daily life for various potential applications. In the recent years, metal oxide semiconductors (MOS) become the primary choice for designing highly sensitive, stable, and low‐cost real‐life applications‐based gas sensors due to their inherent physical and ...
Neeraj Goel   +3 more
openaire   +2 more sources

Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures

open access: yesNanotechnology Reviews, 2017
The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In
John Chelliah Cyril R.A.   +1 more
doaj   +1 more source

Focused Review on Print‐Patterned Contact Electrodes for Metal‐Oxide Thin‐Film Transistors

open access: yesAdvanced Materials Interfaces, 2023
Metal‐oxide‐semiconductor‐based thin‐film transistors (TFTs) are exploited in display backplanes and X‐ray detectors fabricated by vacuum deposition and lithographic patterning.
Fei Liu   +3 more
doaj   +1 more source

Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches

open access: yesДоклады Белорусского государственного университета информатики и радиоэлектроники, 2021
Present work is devoted to the development of a mathematical model for the forward current-voltage characteristic of Schottky diodes with a metal – oxide – semiconductor (MOS) trench structure, which takes into account the accumulation of the main ...
J. A. Solovjov
doaj   +1 more source

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