Results 1 to 10 of about 3,721 (215)
Large Lateral Photovoltaic Effect in Metal-(Oxide-)Semiconductor Structures
The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position.
Chongqi Yu, Hui Wang
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Metal-Oxide FET Biosensor for Point-of-Care Testing: Overview and Perspective
Metal-oxide semiconducting materials are promising for building high-performance field-effect transistor (FET) based biochemical sensors. The existence of well-established top-down scalable manufacturing processes enables the reliable production of cost ...
Mohamed Taha Amen +4 more
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Editorial for the Special Issue on Magnetic and Spin Devices, Volume II
Although the miniaturization of metal–oxide–semiconductor field effect transistors (MOSFETs)—the main driver behind an outstanding increase in the speed, performance, density, and complexity of modern integrated circuits—is continuing, numerous ...
Viktor Sverdlov, Seung-Bok Choi
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This letter presents magnetic tunnel junction based spintronic devices completely implemented in a hybrid semiconductor process that comprises a complementary metal oxide semiconductor and a magnetic tunnel junction technology.
Rui Ma +14 more
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The electrodeposition coated graphene oxide (GO) sheets on semiconductor metal oxide substrates are reduced to produce transparent, flexible, and conductive electrodes.
Fatma Bayrakçeken Nişancı
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The aim of this review is to gather current researches into sensors based on noble metal and semiconductor nanomaterials in biomedical detection and elucidate the basic principle and applications of different sorts of semiconductor nanomaterials, i.e ...
Liya Feng +7 more
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Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance
Arnar M. Vidarsson +3 more
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Current and capacitance characteristics of Al/SiO2/Si(p) metal-insulator-semiconductor tunnel diode (MISTD) with oxide thickness in the range of about 2–4 nm were fabricated and studied in detail in this work.
Kung-Chu Chen +2 more
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Metal Oxides-Based Semiconductors for Biosensors Applications [PDF]
The present mini review contains a concessive overview on the recent achievement regarding the implementation of a metal oxide semiconductor (MOS) in biosensors used in biological and environmental systems. The paper explores the pathway of enhancing the sensing characteristics of metal oxides by optimizing various parameters such as synthesis methods,
Ionel Şerban, Alexandru Enesca
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Metal oxide semiconductor-based Schottky diodes: a review of recent advances
Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
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