Results 41 to 50 of about 3,721 (215)
Advanced Engineering Materials, EarlyView.A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol +5 more
wiley +1 more source
Effect of Oxide Layer in Metal-Oxide-Semiconductor Systems
MATEC Web of Conferences, 2016 In this work, we investigate the electrical properties of oxide layer in the metal-oxide semiconductor field effect transistor (MOSFET). The thickness of oxide layer is proportional to square root of oxidation time.
Fan Jung-Chuan, Lee Shih-Fong
doaj +1 more source
Advanced Functional Materials, EarlyView.An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Metal oxide semiconductor-based methane sensing
Carbon FutureReal-time and sensitive detection of methane (CH4) is vital to the safety of life and production due to the explosivity and greenhouse effect of methane.
Renjie Chen +4 more
doaj +1 more source
Local mapping of interface traps using contactless capacitance transient technique
AIP Advances, 2016 Contactless capacitance transient techniques have been applied to local mapping of interface traps of a semiconductor wafer. In contactless capacitance transient techniques, a Metal-Air gap-Oxide-Semiconductor (MAOS) structure is used instead of a ...
Haruhiko Yoshida, Hidenobu Mori
doaj +1 more source
A FinFET with one atomic layer channel
Nature Communications, 2020 FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to
Mao-Lin Chen +14 more
doaj +1 more source
A novel PMOS transistors based first-order all-pass network
e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023 In this paper, a new voltage-mode first-order all-pass network is introduced. It is realized by using only four p-channel metal–oxide–semiconductor transistors, one resistor and one capacitor.
Bhartendu Chaturvedi +2 more
doaj +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
Advanced Functional Materials, EarlyView.In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
AIP Advances, 2020 Simple and facile solution-processed thin-film transistors (TFTs) using metal-oxide semiconductors are promising for producing large-area electronics.
Masashi Miyakawa +4 more
doaj +1 more source