Results 61 to 70 of about 2,648,294 (305)

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

High-quality spin-on glass-based oxide as a matrix for embedding HfO₂ nanoparticles for metal-oxide-semiconductor capacitors [PDF]

open access: yes, 2012
By using a low cost, simple, and reproducible spin-coating method, thin films of SOG (spin-on-glass)-based oxides with electrical characteristics resembling those of a dry thermal oxide have been obtained. The superior electrical characteristics of Metal-
Wilfrido Calleja Arriaga   +4 more
core  

Solution Composition for Manufacturing Metal Oxide Semiconductor

open access: yes, 2013
Provided is a solution composition for manufacturing a metal oxide semiconductor including aluminum salts, metal acetylacetonate and a solvent. In addition, provided is a method for manufacturing a metal oxide semiconductor, including: manufacturing of a
Bae, Byeong-Soo, Hwang, Young Hwan
core   +1 more source

A FinFET with one atomic layer channel

open access: yesNature Communications, 2020
FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET width to
Mao-Lin Chen   +14 more
doaj   +1 more source

Self‐Assembly of Semiconductor Metal Oxide Nanostructures [PDF]

open access: yesJournal of Nanomaterials, 2013
1 Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education and College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025, China 2 School of Physics and Technology, University of Jinan, Shandong, Jinan 250022, China 3 School of Materials Science and Engineering, Nanjing University of Science and ...
Xiang Wu   +3 more
openaire   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

open access: yesAdvanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas   +6 more
wiley   +1 more source

Metal-oxide-semiconductor devices based on epitaxial germanium layers grown selectively directly on silicon substrates by ultra-high-vacuum chemical vapor deposition [PDF]

open access: yes, 2009
textThis document details experiments attempting to increase the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) which are the mainstay of the semiconductor industry.
Donnelly, Joseph Patrick, 1965-
core  

Porosity through reduction in metal oxides [PDF]

open access: yes, 2008
Routes to porous materials with nanoscale dimensions have been investigated. In the first example presented, porous manganese oxide has been prepared by leaching Ni metal from a nickel-manganese oxide precursor via reduction.
Seshadri, R.   +2 more
core   +1 more source

Firing Performance of Microchip Exploding Foil Initiator Triggered by Metal-Oxide-Semiconductor Controlled Thyristor

open access: yesMicromachines, 2020
In this paper, microchip exploding foil initiators were fabricated by micro-electro-mechanical system scale fabrication methods, such as magnetron sputtering, photolithography, and chemical vapor deposition.
Ke Wang   +5 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

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