Results 21 to 30 of about 2,648,294 (305)
Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs [PDF]
, 2011 The electron mobility in Al2O3/InxGa1-xAs (x = 0.53, 0.65, or 0.75) metal-oxide-semiconductor field-effect transistors was analyzed for scattering by oxide charge, as well as interface charge and roughness, and compared with measured transfer ...
Xuan, Yi +7 more
core +1 more source
Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology [PDF]
, 2011 Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P ...
Goiffon, Vincent +14 more
core +1 more source
Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications [PDF]
, 2011 The prospect of enhanced device performance from III-V materials has been recognized for at least 50 years, and yet, relative to the phenomenal size of the Si-based IC industry, these materials fulfilled only specific niches and were often referred to as
Wallace, R. M. +7 more
core +1 more source
Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]
, 2011 This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Philippe Martin-Gonthier +3 more
core +1 more source
Porous anodic metal oxides [PDF]
, 2008 An equifield strength model has been established to elucidate the formation mechanism for the highly ordered alumina pore arrays and titanium oxide nanotubular arrays prepared via a common electrochemical methodology, anodisation. The fundamentals of the
Su, Zixue +3 more
core +1 more source
An Optical Modulator in Unmodified, Commercially-Available CMOS Technology [PDF]
, 2011 11/04/13 Meb. Accepted version, OK to pub.Here we present a method and structures for mid-infrared, free-space optical communication using unmodified, commercially available complementary metal-oxide semiconductor integrated circuits.
Nikolic, K +5 more
core +1 more source
saidigroup/Metal-Oxide-Dataset: Metal_Oxide_dataset
, 2022 Metal oxide training ...
TdS-PdV, Atari5200
core +1 more source
Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics
, 2004 Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric.
Haque, A., Hakim, M.M.A.
core +1 more source
Modular Critical Element Recycling Platform Using a Nanoporous Additively Manufactured Gyroid
Advanced Engineering Materials, EarlyView.A modular recycling platform integrates 3D‐printed nanoporous gyroid structures to enable efficient critical element recovery. This system utilizes a hierarchical architecture, combining macroscopic channels with polymerization‐induced nanoscale porosity. By systematically tuning structural wall thickness and resin formulation, the platform achieves an
Xiangyu Gao +6 more
wiley +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроникиThe influence of recrystallization of a mechanically damaged layer on the working side of a silicon wafer using rapid heat treatment (1000 °C, 20 s) on the electrical parameters of complementary metal-oxide-semiconductor microcircuits has been ...
U. A. Pilipenka +3 more
doaj +1 more source