Results 21 to 30 of about 3,721 (215)

Research progress of preparation process of graphene/ semiconductor metal oxide composite photocatalysts

Gongye shui chuli
Photocatalysts are widely used in water pollution treatment，air purification，disease treatment and environmental remediation because of their strong oxidation，high chemical stability，environmentally friendly and non-toxicity.
WANG Ning, LI Jiayi, LI Tao, XUE An, CHEN Lu, LI Yang   +5 more
doaj   +1 more source

Static characteristics of CMOS digital circuit based on transition metal dichalcogenide transistors

AIP Advances, 2019
Static characteristics of digital combinational logic circuits and Schmitt triggers based on two-dimensional (2D) transition metal dichalcogenides (TMDs) have been systematically explored.
F. F. Mao, Z. Jin, L. Y. Shang, Z. G. Hu, J. H. Chu   +4 more
doaj   +1 more source

Metal Oxide Semi-Conductor Gas Sensors in Environmental Monitoring

Sensors, 2010
Metal oxide semiconductor gas sensors are utilised in a variety of different roles and industries. They are relatively inexpensive compared to other sensing technologies, robust, lightweight, long lasting and benefit from high material sensitivity and ...
George F. Fine, Leon M. Cavanagh, Ayo Afonja, Russell Binions   +3 more
doaj   +1 more source

Carboxylic‐Acid Functionalized Multiwalled Carbon Nanotube‐Alkane‐Based Resistive Temperature Sensor for Cold Chain Applications

Advanced Engineering Materials, EarlyView.
This study presents a reversible temperature sensor with high switching ratio, ∼103. The device is fabricated using PET‐ITO and carbon nanotube dispersions in alkane. Considering its application in cold chain logistics, a proof‐of‐concept with LED is showcased. Thus, a temperature drop below the threshold temperature (crystallization temperature of the
Sunil Kumar Behera, Philippe Marrec, A. Jorge Parola, Madalena Dionísio, Hugo Águas, Andreia F. M. Santos, Hamed Pourkheirollah, Donald Lupo, César A. T. Laia   +8 more
wiley   +1 more source

Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits

Доклады Белорусского государственного университета информатики и радиоэлектроники
The influence of recrystallization of a mechanically damaged layer on the working side of a silicon wafer using rapid heat treatment (1000 °C, 20 s) on the electrical parameters of complementary metal-oxide-semiconductor microcircuits has been ...
U. A. Pilipenka, V. A. Saladukha, H. A. Siarheichyk, D. U. Shestouski   +3 more
doaj   +1 more source

Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology

Advanced Engineering Materials, EarlyView.
We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham, Chenyu Wen, Mohammad Hadi Khaksaran, Won‐Yong Lee, Javier Cruz, Klas Hjort, Dongping Wu, Shi‐Li Zhang   +7 more
wiley   +1 more source

A General Route for Growing Metal Sulfides onto Graphene Oxide and Exfoliated Graphite Oxide

Nanomaterials, 2017
Graphene-based materials are elective materials for a number of technologies due to their unique properties. Also, semiconductor nanocrystals have been extensively explored due to their size-dependent properties that make them useful for several ...
Joana L. Lopes, Ana C. Estrada, Sara Fateixa, Marta Ferro, Tito Trindade   +4 more
doaj   +1 more source

Handbook of Establishing and Maintaining Oxygen‐Free Atmospheres

Advanced Engineering Materials, EarlyView.
This study presents a practical framework for creating oxygen‐free atmospheres at ambient pressure using silane‐doped inert gases. The results show that ultra‐low oxygen levels and strongly reduced water content can be achieved through controlled silane dosing, drying systems, and sensor monitoring.
Sascha Jan Zimmermann, René Gustus, Lienhard Wegewitz, Wolfgang Maus‐Friedrichs   +3 more
wiley   +1 more source

High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor [PDF]

Журнал нано- та електронної фізики, 2011
In this paper we have calculated the flatband capacitance (CFB) for high-k dielectric material hafnia oxide (HfO2) as an insulator and silicon carbide (SiC) as a semiconductor material for metal-oxide-semiconductor (MOS) devices.
N.P. Maity, A. Pandey, S. Chakraborty, M. Roy   +3 more
doaj  

Synthesis of a nano-silver metal ink for use in thick conductive film fabrication applied on a semiconductor package. [PDF]

PLoS ONE, 2014
The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency ...
Lai Chin Yung, Cheong Choke Fei, Js Mandeep, Huda Binti Abdullah, Lai Khin Wee   +4 more
doaj   +1 more source