Results 111 to 120 of about 213,422 (311)
Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctions
AIP Advances, 2012 We report near-perfect transfer of the electrical properties of oxide-free Si surface, modified by a molecular monolayer, to the interface of a junction made with that modified Si surface.
Rotem Har-Lavan +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.An efficient NiOx HTL is successfully prepared by introducing MXene as an additive without further surface modification to fabricate high‐performance FASn0.5Pb0.5I3 perovskite solar cells. The introduction of MXene contributes to improved conductivity of NiOx, better aligned at NiOx/perovskite interfaces, and enhanced quality of perovskite films ...
Lijun Chen +12 more
wiley +1 more source
Mechanism of electron transport and bipolar resistive switching in lead oxide thin films
AIP Advances, 2018 In this paper, we report a model that interprets the mechanism of bipolar resistive switching in thin metal oxide layers as a purely electronic process.
Anatoly A. Petrov +2 more
doaj +1 more source
Polarographic carbon dioxide transducer amplifier [PDF]
, 1971 Electronic amplifier contains matched pair of metal oxide semiconductor field effect transistor devices which have high input impedance and long-term stability.
Stillman, G.
core +1 more source
Toughening β‐Ga2O3 via Mechanically Seeded Dislocations
Advanced Functional Materials, EarlyView.β‐Ga2O3 is promising for next‐generation semiconductors but its brittleness limits flexible and high‐precision applications. Here, mechanically seeded dislocations introduced by surface deformation improved damage tolerance in (001) β‐Ga2O3. Nanoindentation and characterization show dislocations suppress cleavage cracks by enabling stable plastic ...
Zanlin Cheng +5 more
wiley +1 more source
Advanced Functional Materials, EarlyView.This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak +14 more
wiley +1 more source
AIP Advances, 2016 In current work, effects of rapid thermal annealing (RTA) on the interface chemistry and electrical properties of Gd-doped HfO2 (HGO)/Ge stack have been investigated systematically.
Gang He +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A chiral photodetector capable of selectively distinguishing left‐ and right‐handed circularly polarized light is experimentally demonstrated. The device, which features a nanopatterned electrode inverse‐designed by a genetic algorithm within a metal–dielectric–metal nanocavity that incorporates a vacuum‐deposited small‐molecule multilayer, exhibits ...
Kyung Ryoul Park +3 more
wiley +1 more source
Multilevel metallization method for fabricating a metal oxide semiconductor device [PDF]
, 1978 An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and
Bouldin, D. L. +3 more
core +1 more source
Advanced Functional Materials, EarlyView.PTFE nanoparticle–anchored rGO (rGO@PTFE) for scalable solvent‐free fabrication of ultra‐thick, high‐density cathodes, achieving high conductivity (9.55 S cm−1), lithium transference (0.73), and improved wettability, is developed. The resulting cathode delivers 15.2 mAh cm−2 areal and 563 mAh cm−3 volumetric capacities, with full cells exhibiting 637 ...
Juhee Yoon +7 more
wiley +1 more source