Results 191 to 200 of about 2,648,294 (305)

Low Hysteresis Vanadium Dioxide Integrated on Silicon Using Complementary Metal-Oxide Semiconductor Compatible Oxide Buffer Layer. [PDF]

Small Sci
Sahoo SP, Bugnet M, Infante IC, Pierron V, Méchin L, Cervasio R, Hemme P, Brubach JB, Roy P, Fréchette LG, Lamirand AD, Vilquin B.   +11 more
europepmc   +1 more source

P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications. [PDF]

Sensors (Basel), 2022
Moumen A, Kumarage GCW, Comini E.
europepmc   +1 more source

Large‐Scale Determination of Frontier Orbital Energies of Disordered Small‐Molecule Organic Semiconductors Using Exciplex Emission Spectra

Advanced Materials, EarlyView.
ABSTRACT Accurately knowing the frontier orbital energies of the structurally disordered small‐molecule organic semiconductors that are used in optoelectronic devices such as organic light‐emitting diodes is required to rationally improve their performance. Here, we show that these energies can be deduced with a large accuracy from the peak energies of
Christian B. McDonald, Hiroki Tomita, Giacomo Cotelli, Louka L. Brüll, Nanno G. de Rooij, Lucas R.L. Norg, Milo Clément, Reinder Coehoorn   +7 more
wiley   +1 more source

Interfacial Defect Characteristics and Low-temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge-Based Metal Oxide Semiconductor and High-Purity Germanium Detectors. [PDF]

ACS Omega
Du S, Li X, Qiu M, Zhu Y, Tang W, Deng Z, Tian Y, Li Y, Jia K, Li Z, Cheng J, Lv S.   +11 more
europepmc   +1 more source

Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors. [PDF]

Micromachines (Basel), 2022
Lee G, Ha J, Kim K, Bae H, Kim CE, Kim J.   +5 more
europepmc   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits. [PDF]

Sensors (Basel)
Fu Y, Peng Z, Dong Z, Li P, Wei Y, Zhang D, Zuo Y, Zhu J, Niu S.   +8 more
europepmc   +1 more source

CVD Grown Hybrid MoSe2–WSe2 Lateral/Vertical Heterostructures With Strong Interlayer Exciton Emission

Advanced Materials, EarlyView.
A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain, Sai Shradha, Axel Printschler, Julian Picker, Luc F. Oswald, Julian Führer, Nicole Engel, Honey Jayeshkumar Shah, Christof Neumann, Daria I. Markina, Moritz Quincke, Johannes Biskupek, Kenji Watanabe, Takashi Taniguchi, Ute Kaiser, Bernhard Urbaszek, Andrey Turchanin   +16 more
wiley   +1 more source

A Complementary Metal-Oxide-Semiconductor Optoelectronic Analog Front-End Preamplifier with Cross-Coupled Active Loads for Short-Range LiDARs. [PDF]

Sensors (Basel)
Song Y, Choi Y, Jung D, Choi S, Park SM.
europepmc   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source