Results 201 to 210 of about 2,648,294 (305)

A Complementary Metal-Oxide Semiconductor (CMOS) Analog Optoelectronic Receiver with Digital Slicers for Short-Range Light Detection and Ranging (LiDAR) Systems. [PDF]

Micromachines (Basel)
Song Y, Park SM.
europepmc   +1 more source

Chloride Ions: Essential Agents for Achieving Spontaneous Delamination of MXene

Advanced Materials, EarlyView.
This work first identifies chloride ions as essential agents for spontaneous MXene delamination. Without Cl−, etched Ti3C2Tx remains multilayered; with Cl−, interlayer modification enables Li+ intercalation and osmotic swelling. The SPEED process couples HF‐assisted Al extraction, Cl−‐mediated interlayer expansion, and Li+‐driven swelling to produce ...
Sukhyeun Jang, Yong‐Jae Kim, Incheol Jeong, Minju Kim, Jaewoong Lee, Jihan Kim, Ki‐Min Roh, Kang Taek Lee, Seon Joon Kim, Yonghee Lee, Chi Won Ahn, Hee‐Tae Jung   +11 more
wiley   +1 more source

The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures. [PDF]

Micromachines (Basel)
Xie W, Chen X, Zhang L, Lu X, Ding B, Xie A.   +5 more
europepmc   +1 more source

Electrocatalyst/Semiconductor Interfaces in Photoelectrocatalysts: Mechanistic Analysis of the Impact of Nanoparticle Electrocatalyst Coverage on Performance

Advanced Materials, EarlyView.
Reducing Ni nanoparticle coverage on n‐Si photoanodes enhances photovoltage by promoting thicker interfacial SiOx formation during photoelectrochemical oxygen evolution reaction (OER). Experiments, analytical modeling, and finite‐element simulations reveal that coverage‐dependent chemical interface evolution, rather than geometric effects alone ...
Aarti Mathur, Ahmet Sert, Suljo Linic
wiley   +1 more source

A Low-Power Complementary Metal-Oxide-Semiconductor Receiver with Quadrature Bandpass Continuous-Time Delta-Sigma Analog-to-Digital Converter for IoT Applications. [PDF]

Sensors (Basel)
Kim NS.
europepmc   +1 more source

Metal Oxide Nano‐Interface Boosting the Deep Ultraviolet Adjustable Noise‐Filtering In‐Sensor Computing

Advanced Materials, EarlyView.
We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju, Peng Li, Jingsong Yuan, Boyuan Yu, Bin Han, Yusheng Chen, Jiangang Ma, Haiyang Xu, Yichun Liu, Paolo Samorì   +9 more
wiley   +1 more source

An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors. [PDF]

Sensors (Basel)
Wu JY, Lu YW, Liu MH, Chang TN, Liu CH.
europepmc   +1 more source

Adsorption‐Engineered Hydrocarbon Ionomers for Durable Proton‐Exchange Membrane Fuel Cells

Advanced Materials, EarlyView.
Hydrocarbon ionomers suffer from oxidation‐driven interfacial degradation in PEM fuel cell cathodes, leading to catalyst instability. Here, adsorption‐engineered poly(fluorene) ionomers decouple interfacial anchoring from oxidative degradation, enabling strong catalyst–ionomer interactions while resisting electrochemical oxidation.
Heemin Park, Kate Chen, Su Min Ahn, Hengquan Guo, Cy Fujimoto, Jong‐Ho Choi, Lynda Amichi, Danah Kim, Seung Geol Lee, Xiaojing Wang, Jacob S. Spendelow, Sun Young Kang, Panagiotis Bexis, Eun Joo S. Park, Yu Seung Kim   +14 more
wiley   +1 more source

Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation. [PDF]

Sensors (Basel)
Liu Y, Zhao S, You L, Xu Y, Si R, Zhang S.   +5 more
europepmc   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source