Results 211 to 220 of about 2,648,294 (305)
A Lightweight and High Yield Complementary Metal-Oxide Semiconductor True Random Number Generator with Lightweight Photon Post-Processing. [PDF]
Ngo CT, Ko HW, Choi JW, Nam JW, Hong JP.
europepmc +1 more source
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho +6 more
wiley +1 more source
Our work introduces a new framework that fundamentally changes how orientation in bismuth oxyhalide systems is approached. Comprehensive experiments, backed by theoretical models, reveal the pivotal role of halide anions to modify the van der Waals stacking energies required to direct orientation. Our method enables the fabrication of near perfect (001)
Gabriel Aygur +10 more
wiley +1 more source
High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond. [PDF]
Liao M, Sun H, Koizumi S.
europepmc +1 more source
Alkoxy chain length drives a continuous transition from eclipsed AA to a serrated, slipped AA* configuration over Co‐porphyrin COFs. A moderate slip both contracts the pore channel to enrich CO2 and suppress hydrogen evolution, and enhances collective high‐spin of Co sites, which delivers a record CO production rate with high selectivity.
Jie He +8 more
wiley +1 more source
Zebrafish Insights into Nanomaterial Toxicity: A Focused Exploration on Metallic, Metal Oxide, Semiconductor, and Mixed-Metal Nanoparticles. [PDF]
Mutalik C +6 more
europepmc +1 more source
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi +12 more
wiley +1 more source
Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3-1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers. [PDF]
Li R, Zhou S, Yang C, Wang J.
europepmc +1 more source
A hierarchical flexible ceramic nanofiber membrane integrates a La‐stabilized ZrO2 scaffold with superhydrophobic UiO‐66‐NH2/CdS heterojunctions. The gas–liquid–solid interfacial architecture sustains vapor‐selective desalination, visible‐light charge separation, and rapid H2 extraction, enabling simultaneous freshwater production and photocatalytic ...
Pengfei Lin +9 more
wiley +1 more source
Broadband Tunable Infrared Light Emission from Metal-Oxide-Semiconductor Tunnel Junctions in Silicon Photonics. [PDF]
Doderer M +12 more
europepmc +1 more source

