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Dual-metal-gate-integration complementary metal oxide semiconductor process scheme using Ru positive-channel metal oxide semiconductor and TaC negative-channel metal oxide semiconductor gate electrodes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2007
This article presents the development of a wet removal process on the integration of complementary metal oxide semiconductor (CMOS) dual metals with Ru for positive-channel metal oxide semiconductor and TaC for negative-channel metal oxide semiconductor on high-k HfO2 gate dielectric. The integration scheme focused on the wet etching capability for the
Wen-Tung Chang   +2 more
openaire   +1 more source

Metal Oxide Semiconductors

2023
Zhigang Zang, Wensi Cai, Yong Zhou
openaire   +1 more source

Electronic defects in metal oxide photocatalysts

Nature Reviews Materials, 2022
Ernest Pastor   +2 more
exaly  

The kinetics of metal oxide photoanodes from charge generation to catalysis

Nature Reviews Materials, 2021
Sacha Corby, R R Rao, Ludmilla Steier
exaly  

Semiconductor metal oxide gas sensors

Научно-образовательный портал "Большая российская энциклопедия", 2023
Artem Sergeevich Mokrushin   +1 more
openaire   +1 more source

Oxide spin-orbitronics: spin–charge interconversion and topological spin textures

Nature Reviews Materials, 2021
Felix Trier, Paul Noël, Joo-Von Kim
exaly  

Metal-Oxide-Semiconductor Technology

Scientific American, 1973
openaire   +1 more source

Vanadium Oxide: Phase Diagrams, Structures, Synthesis, and Applications

Chemical Reviews, 2023
Peng Hu, Li-Qiang Mai, Yi Long
exaly  

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