Results 1 to 10 of about 16,307 (114)
A Millimeter-Wave GaN MMIC Front End Module with 5G NR Performance Verification [PDF]
This paper proposes a millimeter-wave (mmWave) 5G front end module (FEM) based on multiple gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) with 5G new radio (NR) performance verification.
Ji-Hye Hwang +3 more
doaj +1 more source
C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness [PDF]
In this paper, using the 0.2 μm ETRI GaN HEMT process, we developed a C-band GaN dual-feedback low-noise amplifier MMIC for an RF receiver module that requires high-input power robustness.
Ha-Wuk Sung +5 more
doaj +1 more source
This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth orbit (LEO) constellations that operate ...
Javier del Pino +6 more
doaj +1 more source
A Ku-Band GaN-on-Si MMIC Power Amplifier with an Asymmetrical Output Combiner
In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride on silicon (GaN-on-Si) is presented.
Javier del Pino +6 more
doaj +1 more source
Detecting Associations Based on the Multi-Variable Maximum Information Coefficient
The maximum information coefficient (MIC) is a novel and widely-using measure of association detection in large datasets. The most outstanding feature of MIC is that it has both generality and equability. However, MIC can only deal with two variables and
Taoyong Gu +3 more
doaj +1 more source
Single-Event Transients in an IEEE 802.15.4 RF Receiver for Wireless Sensor Networks
This paper presents a procedure to analyse the effects of radiation in an IEEE 802.15.4 RF receiver for wireless sensor networks (WSNs). Specifically, single-event transients (SETs) represent one of the greatest threats to the adequate performance of ...
Sergio Mateos-Angulo +4 more
doaj +1 more source
A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology
This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs).
Dalal Fadil +10 more
doaj +1 more source
High Dynamic-Range and Very Low Noise K-Band p-HEMT LNA MMIC for LMDS and Satellite Communication [PDF]
An excellent noise figure and high linearity, K-band p-HEMT LNA MMIC, that incorporates single-bias configuration and negative feedback circuit, has be en developed for LMDS (Local Multi-point Distribution Service) and satellite communication.
Fukaya, J. +3 more
core +1 more source
Robust Ku-Band GaN Low-Noise Amplifier MMIC [PDF]
This paper employs the 0.2 μm ETRI GaN HEMT process on SiC to develop a Ku-band GaN low-noise amplifier monolithic microwave integrated circuit (MMIC) characterized by high-input power robustness for radar transceiver modules.
Seong-Hee Han, Dong-Wook Kim
doaj +1 more source
W‐Band MMIC chipset in 0.1‐μm mHEMT technology
We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology.
Jong‐Min Lee +11 more
doaj +1 more source

