Multifunction MMIC For Miniaturized Solid State Switch Matrix [PDF]
, 2003 This paper describes a new multifunction MMIC expressly designed for a reconfiguration matrix equipment.This MMIC has been developed using a standard PHEMT process and includes two switches,a totally switchable-off amplifier and a temperature ...
Cavanna, T. +3 more
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An Analytical Scalable Lumped-Element Model for GaN on Si Inductors
IEEE Access, 2020 In this paper, a wide-band distributed model that can approximate the behaviour of square and octagonal inductors, both with and without tapering, is presented.
Mario San Miguel Montesdeoca +5 more
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Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier [PDF]
, 2001 We evaluate an oscillator-amplifier MMIC submitted to high-temperature operating life time tests. To relate adequately these results with individual components’ results, it is important to realise that failure mechanisms in non-linear MMICs are governed ...
Beyer, A. +5 more
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Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors
AIP Advances, 2019 This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma +6 more
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Global modeling approach to the design of an MMIC amplifier using Ohmic Electrode-Sharing Technology [PDF]
, 2003 An innovative technique for high--density, high-frequency integrated circuit design is proposed.The procedure exploits the potentialities of a global modeling approach,previously applied only at device level,enabling the circuit designer to explore ...
Cidronali, A. +4 more
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W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth [PDF]
, 2002 Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1- µµµµm GaAs MMIC process.
Chu, Tah-Hsiung +2 more
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Design of a Broadband Amplifier for High Speed Applications [PDF]
, 2002 This paper provides comprehensive insight into the design approach followed for an amplifier dedicated to high speed base band signals. To demonstrate the methodology, an amplifier consisting of nine PHEMT cascode cells within a distributed amplifier ...
Camargo, E. +4 more
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Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure [PDF]
Journal of Electromagnetic Engineering and ScienceIn this work, an X-band gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a switched impedance network for improved noise performance is designed and fabricated using a 0.25 μm GaN WIN-semiconductor ...
Byeong-Uk Lee
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Research progress on terahertz integrated power amplifier
Dianzi Jishu Yingyong, 2019 In this paper, the current development status and bottleneck problems of terahertz science and technology are presented. The emphasis of discussion is on research progress of the core component in terahertz circuits, monolithic integrated power amplifier.
Han Jiangan, Cheng Xu
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Ultra-Wideband Asymmetric Impedance Transformer Design for High-Power Amplifier MMICs [PDF]
Journal of Electromagnetic Engineering and ScienceIn this study, an asymmetric impedance transformer is proposed for broadband high-power amplifier (HPA) monolithic microwave-integrated circuits (MMICs).
Jihoon Kim
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