Results 211 to 220 of about 75,173 (277)
Growth of Gan on Porous Sic Substrates by Plasma-Assisted Molecular Beam Epitaxy
, 2002 C. K. Inoki +4 more
openalex +2 more sources
Simulation of Carrier Injection Pathways in Axial GaN Nanowire MicroLEDs
Advanced Theory and Simulations, Volume 9, Issue 2, February 2026.This study examines how geometrical variations in the active region affect carrier injection in multiple quantum well light‐emitting diodes (LEDs) based on axial nanowires. The key role of semipolar quantum wells located at the nanowire edges is highlighted, which efficiently facilitates electron injection into the central polar quantum wells.
Amadéo Vibert +3 more
wiley +1 more source
d‐Wave Fermi Surface Instability in the Nematic Phase of Two Monolayer FeSe/SrTiO3
Advanced Science, Volume 13, Issue 7, 3 February 2026.Angle‐resolved photoemission spectroscopy reveals a d‐wave nematic order in two‐monolayer FeSe/SrTiO3, showing degenerate dxz/dyz bands at Γ but a pronounced splitting at M. This momentum‐dependent anisotropy identifies the nematicity as a d‐wave Fermi surface (Pomeranchuk) instability, highlighting 2D FeSe as a model platform to explore the interplay ...
C. Y. Tang +14 more
wiley +1 more source
Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys [PDF]
Stephen T. Schaefer +5 more
openalex +1 more source
XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim +6 more
wiley +1 more source
Phonons in Single‐Domain κ‐Ga2O3 Studied by Polarization Angle‐Resolved Raman Scattering
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.Single‐domain κ‐Ga2O3 is systematically studied using advanced Raman spectroscopy, revealing over 100 Raman‐active phonon modes. These modes are compared with theoretical predictions and organized within a newly established nomenclature, offering a robust reference for future research.
Alwin Wüthrich +11 more
wiley +1 more source
Angewandte Chemie, Volume 138, Issue 2, 9 January 2026.Integrated Rh–MoRhOx cluster heterostructures on InGaN/GaN nanowires facilitate efficient charge extraction and spatially coupled hydrogen and oxygen evolution reactions, thereby fundamentally accelerating the overall water splitting kinetics. Abstract The quest for efficient solar‐driven water splitting, a promising avenue for clean fuel production ...
Bingxing Zhang +11 more
wiley +2 more sources
Supercritical Ge Layers on Si(001) Grown By Ultra-Low-Temperature Molecular Beam Epitaxy
Wilflingseder, Christoph
openalex +1 more source
Bandgap Engineering On Demand in GaAsN Nanowires by Post‐Growth Hydrogen Implantation
Small, Volume 22, Issue 7, 2 February 2026.The GaAsN bandgap in the GaAs/GaAsN core–shell nanowire shifts to lower energy for increasing N concentrations. By post‐growth H implantation the GaAsN bandgap is moved to a higher GaAs‐like energy through the formation of N–H complexes. By thermal annealing, these complexes can be partially dissolved, allowing to tune the GaAsN bandgap over a range of
Nadine Denis +11 more
wiley +1 more source