Results 241 to 250 of about 24,512 (305)

Dual-Stage Annealing for Enhanced Thulium Oxynitride Passivation on a 4H-SiC MOS Capacitor. [PDF]

ACS Omega
Deng J, Chen J, Quah HJ.
europepmc   +1 more source

Sulfur vacancy-confined Co-Mo sites in MoS₂ for high-efficiency CO₂ hydrogenation to formate. [PDF]

Nat Commun
Wang Z, Kang Y, Chen G, Ji Q, Zhang Y, Qi Y, Zhu J, Zhou W, Huang R, Hu J, Yu L, Tian ZQ, Deng D.   +12 more
europepmc   +1 more source

Few-layer MoS₂ dispersion induced by sulfur atom sharing to promote CO₂ hydrogenation to methanol.

J Mater Chem A Mater
Alves GAS, Bellomi S, Wagner T, Tampieri A, Etzlstorfer C, Stöger-Pollach M, Cano-Blanco DC, Föttinger K.   +7 more
europepmc   +1 more source

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Ionic current in MOS structures

Annales des Télécommunications, 2004
A new approach of determining dynamic ionic current-voltage characteristic that is due to ion transport phenomenon in the oxide is presented. In this approach, the formulation of I–V characteristics ofmos device can be achieved through the use of the theoretical model of mobile ion distribution in oxides.
Hamid Bentarzi, Rachid Bouderbala, Ahmed Zerguerras   +2 more
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Synthesis and structure of hexabenzyl-dimolybdenum (MoMo)

Polyhedron, 1986
Abstract The homoleptic benzyl Mo2(CH2Ph)6 has been obtained by reaction of either MoCl4(thf)2 or Mo2(OPri)6 with Mg(CH2Ph)2. The dark-red, sparingly soluble complex has been characterized by 1H and 13C NMR as well as by a solid-state structure analysis.
Sharon M. Beshouri, Ian P. Rothwell, Kirsten Folting, John C. Huffman, William E. Streib   +4 more
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Structure of hexacarbonylbis(pentamethylcyclopentadienyl)dimolybdenum(Mo–Mo)

Acta Crystallographica Section C Crystal Structure Communications, 1988
[Mo 2 (C 5 Me 5 ) 2 (CO) 6 ] cristallise dans le systeme monoclinique avec le groupe d'espace P2 1 /n.
W. Clegg, N. A. Compton, R. J. Errington, N. C. Norman   +3 more
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Photoemission study of the electronic structure of Mo and Mo oxides

Journal of Physics C: Solid State Physics, 1983
The electronic structure of Mo and Mo oxides has been studied using ultraviolet and X-ray photoelectron spectroscopy. The valence band spectrum of Mo(100) is compared with calculations of the density of states (DOS). A fairly good agreement of the characteristic peak positions with the DOS maxima is obtained.
F Werfel, E Minni
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Au/SnO2/n-Si (MOS) structures response to radiation and frequency

Microelectronics Journal, 2003
Metal-insulator-semiconductor (MOS) structures with insulator layer thickness of 290 Angstrom were irradiated using a Co-60 (gamma-ray) source and relationships of electrical properties of irradiated MOS structures to process-induced surface defects have
A Tataroglu, S Karadeniz, N TUĞLUOĞLU   +2 more
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Instabilities of MOS Structure

Japanese Journal of Applied Physics, 1967
The surface charge density of MOS structure is strongly affected by the bias and temperature (BT) treatment. Ordinary and “clean” MOS diodes are prepared by using the (100) and (111) planes. The results on the “clean” diodes during the BT treatment at high electric field of both polarities show the presence of an electrochemical reaction.
Yoshio Miura, Yasuo Matukura
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