Results 251 to 260 of about 24,512 (305)

Electroluminescence of silicon nanocrystals in MOS structures

Applied Physics A, 2002
We have studied the structural, electrical and optical properties of MOS devices, where the dielectric layer consists of a substoichiometric SiOx (x < 2) thin film deposited by plasma-enhanced chemical vapor deposition. After deposition the samples were annealed at high temperature (> 1000 °C) to induce the separation of the Si and the SiO2 phases with
G Franzò, A Irrera, E Ceretta Moreira, M Miritello, F Iacona, D Sanfilippo, G Di Stefano, PG Fallica, F Priolo   +8 more
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Characterization of MOS Structures with Buried Layers

Physica Status Solidi (a), 1978
After boron implantation into n-type silicon the shapes of the MOS C–V curves differ considerably from those of non-implanted samples. A general equivalent network is presented. Beside the p-n junctions other components due to lateral current flow are included in this network. Admittance and crosstalk experiments verify the proposed model.
W. R. Fahrner, E. Klausmann
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Structural changes in the Mo(100) reconstruction

Physical Review Letters, 1993
The clean Mo(100) surface reconstructs at low temperature forming a commensurate [ital c](7 [radical]2 [times] [radical]2 )[ital R]45[degree] displacement wave. LEED studies over the range 10 to 300 K reveal a change in the harmonic content of this wave at intermediate temperatures corresponding to a sharpening of antiphase domain walls as [ital T] is ...
, Daley, , Felter, , Hildner, , Estrup
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Phonons in (001) Mo/W/Mo and W/Mo/W layer structures

Physica Scripta, 1995
We have calculated the frequencies and local mode densities for phonons in (001) Mo/W/Mo and W/Mo/W sandwiches by means of the surface Green function matching method. A force constant model including two-body and three-body interactions up to third neighbours, which gives a reasonably accurate description of the bulk dispersion relations, has been ...
L Fernández-Alvarez, V R Velasco
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Interfacial reaction in MOS structures

Journal of Vacuum Science and Technology, 1976
The kinetics of the reduction of SiO2 in Au/SiO2/Si structures has been studied as a function of time, temperature, and annealing environment. Reduction of the oxide seems to be dependent on the presence of Au–Si eutectic as regions free of Au remained intact and samples of Au on bulk glass showed no reactions.
E. I. Alessandrini, D. R. Campbell, K. N. Tu   +2 more
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Surface Roughness Scattering in MOS Structures

2010
The comprehensive Ando’s surface roughness (SR) model examined for nMOSFETs. Four distinct source terms contribute in SR scattering. Relative strength of these contributing source terms are evaluated and compared. The most influential term turned out to be due to scattering with the “physical steps” at the interface.
Shah, R., DeSouza, M.
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Thermally stimulated ionic conduction in MOS (MoSiO2Si) structures

Journal of Electrostatics, 1977
Abstract Results on thin films of silicon dioxide made by a low temperature process (oxidation of silane SiH4) are presented. We used a MOS structure MoSiO2Si for our investigations. Both capacitance-voltage and thermostimulated current measurements were made. A high ionic contamination (Na+) of 8 × 10−2 has been found.
Manifacier, J.-C., Parot, P., Fillard, J.-P.   +2 more
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Organoimido complexes of Mo(IV), Mo(V) and Mo(VI): preparation, structure and reactivity

Polyhedron, 1986
Abstract Two series of p-tolylimido (Ntol) complexes of Mo(VI), Mo(V) and Mo(IV) are described. One series, containing diethyldithiocarbamate ligands, is formed via oxygen atom abstraction from Mo(VI)O(Ntol)(S2CNEt2)2 using tertiary phosphines which affords the oxo-bridged Mo(V) dimer [Mo(Ntol)(S2CNEt2)2]2O and the Mo(IV) species Mo(Ntol)(S2CNEt2)2 ...
C.Y. Chou, D.D. Devore, S.C. Huckett, E.A. Maatta, J.C. Huffman, F. Takusagawa   +5 more
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Analysis of Gold-Doped MOS Structures

physica status solidi (a), 1985
A theoretical analysis of the charge state of gold atoms within the silicon surface depletion region which explains the experimental variation of the minimum capacitance in gold-doped MOS structures is presented. To explain the positive shift of the threshold voltage a new physical model is proposed: the gold atoms with deep energy levels, Ec −0.55 eV ...
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The MOS Structure

2011
The metal-oxide-semiconductor (MOS) capacitor is an important structure, which is incorporated in the surface of most semiconductor devices. It forms an essential part of a MOSFET which in turn is an important device used in large-scale integration. A simple physical approach applied to MOS structure and a behavior of ideal MOS capacitor, which are ...
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